2004
DOI: 10.1109/jssc.2004.835809
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A 66-333-MHz 12-mW register-controlled DLL with a single delay line and adaptive-duty-cycle clock dividers for production DDR SDRAMs

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Cited by 34 publications
(2 citation statements)
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“…In order to achieve a memory bus data rate of over 400 Mbps/pin, DDR-x SDRAMs must incorporate an on-chip delay-locked loop (DLL) [1,2,3,4,5,6,7,8,9,10,11,12] that can eliminate skew problems and achieve higher timing margin at high frequencies. To design a DLL that can support both DDR3 and DDR4 specifications at the same time [13,14], the DLL should be locked within 512 clock cycles and operate over a frequency range from 300 MHz to 1.6 GHz using an internal supply voltage of less than 1.2 V. Also, the DLL must be capable of correcting the duty cycle of the distorted input clock so that the data-valid window (tDV) could be widened [2].…”
Section: Introductionmentioning
confidence: 99%
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“…In order to achieve a memory bus data rate of over 400 Mbps/pin, DDR-x SDRAMs must incorporate an on-chip delay-locked loop (DLL) [1,2,3,4,5,6,7,8,9,10,11,12] that can eliminate skew problems and achieve higher timing margin at high frequencies. To design a DLL that can support both DDR3 and DDR4 specifications at the same time [13,14], the DLL should be locked within 512 clock cycles and operate over a frequency range from 300 MHz to 1.6 GHz using an internal supply voltage of less than 1.2 V. Also, the DLL must be capable of correcting the duty cycle of the distorted input clock so that the data-valid window (tDV) could be widened [2].…”
Section: Introductionmentioning
confidence: 99%
“…Currently, most DDR3/DDR4 SDRAMs use a digital DLL [1,2,3,4,10,11]. One of the reasons for using digital architectures is because DDR3/DDR4 SDRAMs require fast recovery times for various power mode transitions.…”
Section: Introductionmentioning
confidence: 99%