2010 IEEE MTT-S International Microwave Symposium 2010
DOI: 10.1109/mwsym.2010.5517228
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A 68% efficiency, C-band 100W GaN power amplifier for space applications

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Cited by 40 publications
(26 citation statements)
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“…9 [4,[6][7][8][9][14][15][16][17]. To the best of our knowledge, the PAE of 72.1% with 107.4 W output power is the highest ever reported of C-band GaN HEMT amplifiers operating with over 100 W output power.…”
Section: Measurement Resultsmentioning
confidence: 88%
See 1 more Smart Citation
“…9 [4,[6][7][8][9][14][15][16][17]. To the best of our knowledge, the PAE of 72.1% with 107.4 W output power is the highest ever reported of C-band GaN HEMT amplifiers operating with over 100 W output power.…”
Section: Measurement Resultsmentioning
confidence: 88%
“…C-band amplifiers with high output power and high power added efficiency (PAE) play a key role in many radio systems, such as satellite communication systems, mobile and wireless base stations [1,2]. Some GaN HEMT amplifiers with over 100 W output power at C-band have been reported [3][4][5][6][7][8]. Harmonic tuning technique [9,10] is now widely used to realize high efficiency, which can simultaneously achieve high efficiency and high output power.…”
Section: Introductionmentioning
confidence: 99%
“…Comparison with state-of-the-art power amplifiers considering PAE higher than 45%, output powers higher than 10 W, relative bandwidths higher than 10%, and a center frequency between 2.5 and 4.0 GHz [12][13][14][15][16][17][18][19].…”
Section: A C K N O W L E D G E M E N T Smentioning
confidence: 99%
“…For high-speed technologies fielded in harsh radiation environments (e.g., telecommunications satellites and other space-based applications) gallium nitride (GaN) is more robust to radiation damage than many other III-V materials [2][3][4][5]. Further, the wide bandgap, along with other material properties, afford GaN impressive applicability in other extreme environments such as those at high temperatures.…”
Section: Introductionmentioning
confidence: 99%