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Two high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEMT MMIC technology at Ka-band frequencies are reported in this paper. They have also been designed in order to ensure high output power and high gain. In continuous-wave (CW) operation, the first three stage power amplifier provides 4.5 W of output power and 33% of power-added-efficiency (PAE) at 30 GHz. The first power amplifier has been mirrored and combined in order to reach higher output power levels. This second MMIC power amplifier provides 8.1 W of output power and 30% of PAE at 30 GHz

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International audienceReported is a design methodology to efficiently control source and load impedances of a power GaN HEMT at the second-harmonic frequency inside a metal ceramic package. Second-harmonic source control is more precisely investigated. A specific filter is implemented at the gate side within the package to transform external source impedances into negative reactances seen by the internal device at second-harmonic frequencies. Whatever the external source termination presented at second-harmonic frequencies, source impedances seen by the internal die are confined to high efficiency regions. This methodology is applied to a 20 W packaged GaN HEMT using internal control of input and output second-harmonic impedances to reach more than 70 of power-added-efficiency (PAE) on 30 relative bandwidth in S-band