Over 70% PAE packaged GaN HEMT through wideband internal matching at second harmonic in S-band

Chéron, Jérôme; Campovecchio, Michel; Barataud, Denis; Reveyrand, Tibault; Stanislawiak, Michel; Eudeline, Philippe; Floriot, D.

doi:10.1049/el.2012.1654

Cited by 6 publications

(6 citation statements)

References 1 publication

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“…Z S at 2f 0 is swept over the entire Smith chart). However, this method of second harmonic source control has already demonstrated significant PAE improvements on wide bandwidth in the S-band, while optimal efficiency areas were reached [11]. Figure 7 shows a photograph of the fabricated packaged power bar with the circuit schematic presenting the actual implementation of ideal circuit elements.…”

Section: A) Design Methods and Circuit Schematicmentioning

confidence: 99%

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Chéron

Campovecchio

Barataud

et al. 2013

Int. J. Microw. Wireless Technol.

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International audienceThis paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50V environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package

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Section: A) Design Methods and Circuit Schematicmentioning

confidence: 99%

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Chéron

Campovecchio

Barataud

et al. 2013

Int. J. Microw. Wireless Technol.

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“…둘째, 패키지 내 부에서 주로 고조파 임피던스 단락회로를 이용하여 정합 하므로 패키지 외부에 바라보는 임피던스에 관계없이 고 조파 임피던스는 고효율 영역으로 정합되며 [6] , 외부 [6] . 더불어, 패키지 외부에서 추가적인 고조 파 임피던스 정합회로가 필요하지 않기 때문에 회로 구 …”

Section: ⅰ 서 론unclassified

A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT

강현욱¹,

이휘섭²,

임원섭³

et al. 2016

The Journal of Korean Institute of Electromagnetic Engineering

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This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

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“…In this study, the L5-CS circuit is optimized only to ensure a control of second harmonic source impedances in safe efficiency regions from while optimal efficiency areas were reached [9].…”

Section: Technology and Package Synthesismentioning

confidence: 99%

Design of a 55 W packaged GaN HEMT with 60% PAE by internal matching in S-band

Chéron

Campovecchio

Barataud

et al. 2012

2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

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-This paper reports a package synthesis method in order to ensure good performances in PAE, output power and bandwidth. The internal matching circuits of the optimized package enable to reach the best impedance pre-matching at fundamental frequencies and also to confine the harmonic impedances seen by the internal GaN power bar into safe efficiency regions whatever the external impedances presented to the package at second harmonic frequencies. In a 500 environment, the packaged GaN HEMT delivers 55 W output power associated with 60% PAE and 13.3 dB power gain at 2.7GHz. By optimizing source and load impedances at the fundamental frequencies, the packaged GaN HEMT demonstrates more than 58% PAE from 2.6 GHz to 3.0 GHz.

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Over 70% PAE packaged GaN HEMT through wideband internal matching at second harmonic in S-band

Cited by 6 publications

References 1 publication

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT

Design of a 55 W packaged GaN HEMT with 60% PAE by internal matching in S-band

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