2016 IEEE Radio and Wireless Symposium (RWS) 2016
DOI: 10.1109/rws.2016.7444379
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A 7.2 mW 74∼82 GHz CMOS low-noise amplifier with 17.3±1.5 dB gain and 7.7±0.3 dB NF for automotive radar systems

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Cited by 6 publications
(3 citation statements)
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“…However, the degenerated inductor used in this type of amplifier can reduce its gain, which is only acceptable at these frequencies due to the high intrinsic transistor gain. As the frequency increases, such as in the V-band, E-band, and W-band, the common-source amplifier is often replaced by a cascode amplifier, which provides higher gain per stage [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ].…”
Section: Introductionmentioning
confidence: 99%
“…However, the degenerated inductor used in this type of amplifier can reduce its gain, which is only acceptable at these frequencies due to the high intrinsic transistor gain. As the frequency increases, such as in the V-band, E-band, and W-band, the common-source amplifier is often replaced by a cascode amplifier, which provides higher gain per stage [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ].…”
Section: Introductionmentioning
confidence: 99%
“…Among these advantages, we can cite much lower substrate drain and substrate source di usion capacities, better integration density, strong reduction in junction surfaces, and possibility of using high-resistive substrates to obtain passive devices (inductors) of highquality factor. Moreover, the frequency performances and characteristics of CMOS devices have been continuously enhancing, and several RFIC/MMIC results using the CMOS technology operating in E/W-band have been published [10][11][12][13][14]. ese prior LNAs have achieved acceptable performances but have been modest in terms of tradeo between the gain and the noise gure (NF), as presented in [11], where G 14.2 dB and NF 6.3 dB.…”
Section: Introductionmentioning
confidence: 99%
“…Besides, the input/output matching networks, device parameters, LC components, and biasing points have been designed to get the e ective results. us, the proposed ampli er is designed with standard microelectronic procedures for low cost, all with the aim of achieving a good performance compared to prior research exposed in [3,4,11,13,14,24,25], as summarized in Subsection 5.4 of this manuscript.…”
Section: Introductionmentioning
confidence: 99%