A 76-Gbit/s 265-GHz CMOS Receiver

Hara, Shinsuke; Dong, Ruibing; Lee, Sangyeop; Takano, Kyoya; Toshida, Naoya; Tanoi, Satoru; Hagino, Tatsuo; Mubarak, Mohamed H.; Sekine, Norihiko; Watanabe, Ichiro; Kasamatsu, Akifumi; Sakakibara, Kunio; Kubo, S.; Miura, Shun; Umeda, Yohtaro; Yoshida, Takeshi; Amakawa, Shuhei; Fujishima, Minoru

doi:10.1109/a-sscc53895.2021.9634780

Cited by 9 publications

(5 citation statements)

References 5 publications

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“…Microstripto-waveguide transitions can offer broadband performance across a broad frequency spectrum while maintaining low insertion losses. The purpose of developing this transition is to establish a connection between the 265 GHz CMOS circuit receiver and the WR-3.4 waveguide interface in a multi-layer substrate [10], [11]. Multi-layer substrates provide the flexibility to integrate various passive and active components.…”

Section: Configuration Of Proposed Transitionmentioning

confidence: 99%

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Broadband Waveguide-to-Differential-Line Transition in Multi-Layer Substrates With Triple Stacked Patch in 300 GHz Band

Chokchai,

Sugimoto,

Sakakibara

et al. 2024

IEEE Access

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A broadband waveguide-to-differential-line transition with a triple stacked patch is proposed for use in 300 GHz band. This transition consists of differential signal lines inserted into the waveguide region from both broad walls of the waveguide. A triple circular stacked patch element was used for broadband transmission from the waveguide to the planar differential line formed in a multi-layer substrate. Concurrently, the optimized arrangement of via holes can prevent electric field leakage efficiently and improve the transmission characteristic in a high-frequency band. The geometry of the transition was optimized through electromagnetic simulations using the finite element method. Measurements and simulations were implemented to evaluate the performance of the transition. The measured result of the transition shows the bandwidth of the S11 below −10 dB was over 100 GHz.

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Section: Configuration Of Proposed Transitionmentioning

confidence: 99%

“…The connection between radio frequency (RF) circuits and antennas significantly affects the signal-to-noise (S/N) ratio. Therefore, waveguide interfaces without interference between the antennas and RF circuits have been developed [10], [11].…”

Section: Introductionmentioning

confidence: 99%

Broadband Waveguide-to-Differential-Line Transition in Multi-Layer Substrates With Triple Stacked Patch in 300 GHz Band

Chokchai,

Sugimoto,

Sakakibara

et al. 2024

IEEE Access

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“…LO and RF signals, superposed in a rat race balun, are input to the mixer. A simple low-loss L-section gives near-optimum power matching between the rat race and the mixer [29]. An open-stub notch filter is placed at the output of the mixer to suppress LO leakage.…”

Section: Design a Cmos Receivermentioning

confidence: 99%

“…In this article, we report on a 300-GHz-band RX chip fabricated using a 40-nm CMOS technology [29]. The center frequency of operation is 265 GHz.…”

mentioning

confidence: 99%

A 76-Gbit/s 265-GHz CMOS Receiver With WR-3.4 Waveguide Interface

Hara

Dong

Lee

et al. 2022

IEEE J. Solid-State Circuits

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A 76-Gbit/s 265-GHz CMOS receiver (RX) modularized with a WR-3.4 waveguide interface is presented. It is a mixer-first RX fabricated using a 40-nm CMOS technology. The primary design focus is simplicity and the resulting low noise and loss and high conversion gain (CG). To allow for both on-wafer and packaged measurements, ON-chip transmission lines are designed such that their characteristics are relatively insensitive to the presence or absence of adhesive covering the chip. The RX chip is flip-chip-mounted on a multilayer printed circuit board (PCB). Built into the PCB is a waveguide transition using double-resonant stacked patches for wideband operation. The CMOS RX module achieves the highest wireless data rate of 76 Gbit/s with 16 QAM, which is comparable to 80 Gbit/s reported previously for a CMOS RX with on-wafer probing measurement.

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“…Digital Object Identifier 10.1109/TMTT.2022.3232501 circuits and antennas because they can be developed independently and are connected by waveguides without interference [5], [6]. Moreover, the interfaces of measurement instruments, such as millimeter-wave modules for vector network analyzers, often serve as waveguides because the characteristics of the test devices can be easily measured from the waveguide interface.…”

Section: Introductionmentioning

confidence: 99%

Broadband Differential-Line-to-Waveguide Transition in Multi-Layer Dielectric Substrates With an X-Shaped Patch Element in 280 GHz Band

Yamazaki

Sugimoto

Sakakibara

et al. 2023

IEEE Trans. Microwave Theory Techn.

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A broadband differential-line-to-waveguide transition covering the 260-300 GHz band was developed in this study. This transition consists of a differential line inserted from the narrow wall of the waveguide that excites an X-shaped patch located at the waveguide center. As the two corners of the patch are excited electromagnetically via differential signal lines in the opposite phase, orthogonal current components that radiate the TE 10 mode into the waveguide are generated. Broadband operation is achieved via the double resonance of the X-shaped patch and a cavity formed by the via-hole arrangement with apertures patterned in a multi-layer substrate. The transition geometries are optimized via electromagnetic simulation using a finite element method. Transition performance is evaluated through measurements and simulations.

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A 76-Gbit/s 265-GHz CMOS Receiver

Cited by 9 publications

References 5 publications

Broadband Waveguide-to-Differential-Line Transition in Multi-Layer Substrates With Triple Stacked Patch in 300 GHz Band

Broadband Waveguide-to-Differential-Line Transition in Multi-Layer Substrates With Triple Stacked Patch in 300 GHz Band

A 76-Gbit/s 265-GHz CMOS Receiver With WR-3.4 Waveguide Interface

Broadband Differential-Line-to-Waveguide Transition in Multi-Layer Dielectric Substrates With an X-Shaped Patch Element in 280 GHz Band

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