A 76 GHz GaN-on-silicon power amplifier for automotive radar systems

Yoshida, Shuhei; Tanomura, M.; Murase, Yasuhiro; Yamanoguchi, Katsumi; Ota, K.; Matsunaga, K.; Shimawaki, H.

doi:10.1109/mwsym.2009.5165784

Cited by 27 publications

(11 citation statements)

References 10 publications

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“…Figure10shows the comparison of J-FOM (= fT × BVgd) as a function of the gate length for various GaN-based HEMTs[20,21,[29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]. The MIS-HEMTs that were fabricated in this study exhibited the J-FOM in the range between 5.57 and 10.67 THz•V, which are the state-of-the-art values reported for GaN-based HEMTs.…”

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confidence: 71%

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

et al. 2020

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This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.

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confidence: 71%

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

et al. 2020

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“…Figure 8 shows the state-of-the-art Johnson's figures of merit (J-FoM = f t x breakdown voltage) versus the gate length for the GaN HEMTs [33], [34], [35], [36], [37], [38], [39], [40], [41], [42], [43], [44], [45]. For the HEMT developed in this study, the J-FoM was calculated to be 6.22 THz V from the measured ft of 24.1 GHz and breakdown voltage of 258 V. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN_x Layer

Kotani

Yaita

Homma

et al. 2023

IEEE J. Electron Devices Soc.

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This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on freestanding AlN substrates with a record-high output power density of 24.4 W/mm at the X-band. A high-drain current operation of 1.4 A/mm was realized by employing high-density 2-dimensional electron gas channel and regrown Ohmic contacts. Furthermore, a high-voltage operation of 110 V was achieved owing to the high-density and high-breakdown SiN x layer grown by low-pressure/high-temperature chemical vapor deposition. Three-stage AlGaN buffer layers improved the electron mobility of 2-dimensional electron gas and allowed us to grow a GaN channel with a low carbon concentration. Furthermore, a regrown n-GaN contact layer was employed to minimize source/drain contact resistances. A high drain current of 1470 mA/mm and high breakdown voltage of 258 V were achieved. Our results demonstrate the potential of GaN HEMTs on the AlN substrate as next-generation high-power radio frequency devices.INDEX TERMS AlN, GaN, high-electron-mobility transistor (HEMT), SiN, high breakdown.

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“…Due to the availability of large-sized silicon wafers and good substrate thermal conductivity, low cost and high power density can be expected. Furthermore, high-performance electronic devices 26 – 30 can be fabricated on a GaN-on-silicon platform to monolithically integrate with the photonic integrated circuit (PIC) to yield an optoelectronic integrated chip. Moreover, PICs based on a GaN-on-silicon platform can extend the light wavelength from ultraviolet to the near-infrared to meet the requirement of visible light applications, which is impossible using InP-based photonics integration and monolithic silicon photonics 31 …”

Section: Introductionmentioning

confidence: 99%

Complete active–passive photonic integration based on GaN-on-silicon platform

Yan,

Fang,

Sun

et al. 2023

Adv. Photon. Nexus

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Suitable optoelectronic integration platforms enable the realization of numerous application systems at the chip scale and are highly anticipated in the rapidly growing market. We report a GaN-on-silicon-based photonic integration platform and demonstrate a photonic integrated chip comprising a light source, modulator, photodiode (PD), waveguide, and Y-branch splitter based on this platform. The light source, modulator, and PD adopt the same multiple quantum wells (MQWs) diode structure without encountering incompatibility problems faced in other photonic integration approaches. The waveguide-structure MQW electro-absorption modulator has obvious indirect light modulation capability, and its absorption coefficient changes with the applied bias voltage. The results successfully validate the data transmission and processing using near-ultraviolet light with peak emission wavelength of 386 nm. The proposed complete active-passive approach that has simple fabrication and low cost provides new prospects for next-generation photonic integration.

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A 76 GHz GaN-on-silicon power amplifier for automotive radar systems

Cited by 27 publications

References 10 publications

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN_x Layer

Complete active–passive photonic integration based on GaN-on-silicon platform

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A 76 GHz GaN-on-silicon power amplifier for automotive radar systems

Cited by 27 publications

References 10 publications

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN x Layer

Complete active–passive photonic integration based on GaN-on-silicon platform

Contact Info

Product

Resources

About

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN_x Layer