A silicon (Si) micro electro mechanical system (MEMS) package using a lightiy-doped Si chip carrier for coplanar waveguide (CPW) microwave and millimeter-wave integrated circuits (MMICs) is proposed in order to reduce parasitic problems of leakage, coupling, and resonance. The proposed chip carrier scheme is verified by fabricating and measuring a high resistivity silicon (HRS, 10 k k m ) CPW on three types of carriers (conductor-back metal, lightly-doped Si, and HRS) in the frequency range 0.5 to 40 GHz. The proposed MEMS package using the lightly-doped (15 Il.cm) Si chip carrier and the WRS shows the low loss and resonance-free since the lightly-doped Si chip carrier effectively absorbs and suppresscs the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss ( s2,) of 2.0 d3, a reflection loss ( s,, ) of 10 dB, and a power loss (PL ) of 6.0 dB up to 40 GHz.