A 9-band WCDMA/EDGE transceiver supporting HSPA evolution

Nilsson, Magnus; Mattisson, Sven; Klemmer, Nikolaus; Anderson, Martin; Arnborg, T.; Caputa, Peter; Ek, Staffan; Lin, Fan; Fredriksson, Henrik; Garrigues, F.; Geis, Henrik; Hagberg, Hans; Hedestig, Joel; Huang, Hu; Kagan, Yevgeniy; Karlsson, N; Kinzel, Henrik; Mattsson, Thomas R.; Mills, Thomas B.; Mu, Fenghao; Mårtensson, Andreas; Nicklasson, L; Oredsson, Filip; Ozdemir, Ufuk; Park, Fitzgerald; Pettersson, Tony; Pahlsson, Tony; Palsson, Markus; Ramon, Stephane; Sandgren, Magnus; Sandrup, Per; Stenman, Anna-Karin; Strandberg, Roland; Sundstrom, L.; Tillman, Fredrik; Tired, Tobias; Uppathil, Satish; Walukas, Joel; Westesson, Eric; Zhang, Xuhao; Andreani, Pietro

doi:10.1109/isscc.2011.5746356

Cited by 29 publications

(8 citation statements)

References 3 publications

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“…Recently, the FT impedance property has been widely used to implement a high-mixer-based RF band-pass filter (BPF) in an RF FE with a voltage-mode passive mixer [4], [5]. The proposed RF control method employs the FT impedance property and provides fine gain resolution.…”

Section: A New Fine Rf Gain Control Methodsmentioning

confidence: 99%

A Wideband Receiver Front-End Employing New Fine RF Gain Control Driven by Frequency-Translated Impedance Property

Kwon

Han²,

Nam³

2015

IEEE Microw. Wireless Compon. Lett.

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A new gain control methodology employing frequency-translated (FT) impedance property is proposed for RF amplifiers. By adaptively controlling the baseband impedance through the FT property, fine RF gain control can be achieved without degradation in the RF characteristics such as noise figure (NF), gain, input matching, and bandwidth. To verify the proposed method, a wideband receiver (RX) front-end (FE) with the fine RF gain control has been designed for 2G/3G/4G cellular applications. The implemented RX FE consists of a wideband capacitor cross-coupled common-gate low-noise amplifier, a 25% duty cycle passive mixer with baseband impedance array, a baseband transconductor with variable input capacitance, and a trans-impedance amplifier.The RX FE was fabricated in a 65 nm CMOS process. It has a conversion gain from 26 dB to 42 dB with 1 dB gain resolution, and achieves a minimum NF lower than 3.3 dB, out-of-band IIP3 of , and IIP2 of more than 56 dBm. It draws an average current of 14.8 mA from a 1.2 V supply voltage.

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Section: A New Fine Rf Gain Control Methodsmentioning

confidence: 99%

A Wideband Receiver Front-End Employing New Fine RF Gain Control Driven by Frequency-Translated Impedance Property

Kwon

Han²,

Nam³

2015

IEEE Microw. Wireless Compon. Lett.

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“…In [29], gain matching was obtained by applying a square wave input to the two modulation input nodes. The calibration loop then minimizes the error voltage developed across the loop filter zero setting resistor.…”

Section: Closed-loop Phase Modulationmentioning

confidence: 99%

Open-Loop Wide-Bandwidth Phase Modulation Techniques

Nidhi

Pamarti

2011

Journal of Electrical and Computer Engineering

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The ever-increasing growth in the bandwidth of wireless communication channels requires the transmitter to be wide-bandwidth and power-efficient. Polar and outphasing transmitter topologies are two promising candidates for such applications, in future. Both these architectures require a wide-bandwidth phase modulator. Open-loop phase modulation presents a viable solution for achieving wide-bandwidth operation. An overview of prior art and recent approaches for phase modulation is presented in this paper. Phase quantization noise cancellation was recently introduced to lower the out-of-band noise in a digital phase modulator. A detailed analysis on the impact of timing and quantization of the cancellation signal is presented. Noise generated by the transmitter in the receive band frequency poses another challenge for wide-bandwidth transmitter design. Addition of a noise transfer function notch, in a digital phase modulator, to reduce the noise in the receive band during phase modulation is described in this paper.

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“…Recently, various blocker rejection/suppression techniques or architectures have been introduced and demonstrated to build the blocker-tolerant RX to handle TX leakage and/or OB blockers [4], [5], [6], [7], [8], [9], [10], [11], [12], [13], [14], [15], [16], [17], [18], [19], [20], [21], [22], [23], [24]. Fig.…”

Section: Introductionmentioning

confidence: 99%

Calibration-Free Blocker Rejection Broadband CMOS Low Noise Amplifier for Advanced Cellular Applications

Jeong

Kim

Lee³

et al. 2023

IEEE Access

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This study presents a broadband complementary metal-oxide semiconductor (CMOS) low noise amplifier (LNA), containing out-of-band (OB) blocker rejection capability without an additional calibration process. In the proposed design, separate all-pass and band-stop filter stages are provided in parallel as main and auxiliary paths, respectively, whose amplitude and phase variations are identically tracked by each other over a process, voltage, and temperature dependency. By appropriately combining an in-band signal and OB blockers passed through those filter blocks, robust OB blocker rejection can be realized in the wide frequency range. The designed LNA incorporates a pre-amplifier stage for broad input matching and low-noise characteristics, an N-path filter-based frequency selective stage, and a combiner stage to suppress undesired OB blockers. The designed calibration-free OB blocker rejection broadband LNA is fabricated in a 65 nm CMOS technology and mainly characterized in long-term evolution frequency division duplexing bands, ranging from 0.7 to 2.7 GHz. The demonstrated design consistently attains transmitter leakage and other OB blocker rejection of more than 22.8 dB and 16 dB in low-band (LB) (0.7−1 GHz) and mid-and high-band (MB and HB) (1.7−2.7 GHz) frequency range from several samples without extra gain or phase adjustment, respectively. The implemented LNA also achieves gains of 10.5−11.0 dB and 8.0−10.0 dB, noise figures of 3.7−4.1 dB and 3.8−4.9 dB, OB third-order intercept points greater than 8.2 dBm and 9.8 dBm, and OB 1-dB compression points greater than −5.2 dBm and −5.5 dBm, for LB and MB/HB, respectively. The implemented design consumes a total bias current of 23.9 mA with a nominal supply of 1.2 V and occupies an active area of 0.53 mm 2 , excluding bonding pads.INDEX TERMS Broadband, calibration-free, cellular, CMOS, feedforward cancellation, long-term evolution (LTE), low-noise amplifier (LNA), N-path filter, out-of-band blocker rejection, wideband.

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A 9-band WCDMA/EDGE transceiver supporting HSPA evolution

Cited by 29 publications

References 3 publications

A Wideband Receiver Front-End Employing New Fine RF Gain Control Driven by Frequency-Translated Impedance Property

A Wideband Receiver Front-End Employing New Fine RF Gain Control Driven by Frequency-Translated Impedance Property

Open-Loop Wide-Bandwidth Phase Modulation Techniques

Calibration-Free Blocker Rejection Broadband CMOS Low Noise Amplifier for Advanced Cellular Applications

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