2012
DOI: 10.1109/lmwc.2012.2197379
|View full text |Cite
|
Sign up to set email alerts
|

A 9 mW, Q-Band Direct-Conversion I/Q Modulator in SiGe BiCMOS Process

Abstract: This letter demonstrates a low-power, -band, directconversion I/Q modulator. The modulator consumes 9 mW power from a 1 V supply and delivers 9 3 dBm RF power at 39 GHz.The modulator exhibits an EVM of 5.3% for 16QAM at 3 Msymbols/s. The circuit is fabricated in 0.12 m SiGe BiCMOS process and occupies an area of 1.5 mm 2 .

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2014
2014
2018
2018

Publication Types

Select...
3
2
1

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(1 citation statement)
references
References 7 publications
0
1
0
Order By: Relevance
“…Quadrature phase (I/Q) modulator (or demodulator) [141,142] is composed of two mixers, which are combined with a 90° hybrid at the input port; meanwhile, an in-phase power divider is utilized at the output (Figure 12). [140]@f c :120.…”
Section: Modulatorsmentioning
confidence: 99%
“…Quadrature phase (I/Q) modulator (or demodulator) [141,142] is composed of two mixers, which are combined with a 90° hybrid at the input port; meanwhile, an in-phase power divider is utilized at the output (Figure 12). [140]@f c :120.…”
Section: Modulatorsmentioning
confidence: 99%