A -90 dBm sensitivity 0.13 μm CMOS bluetooth transceiver operating in wide temperature range

Abstract

A 2.4GHz 0.13µm CMOS transceiver achieving high RX sensitivity and high-quality TX signals between −40 o C and +90 o C is presented.A low-IF receiver and directconversion transmitter architecture is employed.A temperature compensated receiver chain including LNA achieves a sensitivity of −89.6dBm even in the worst environmental condition. Linearity optimization for the transmitter chain including a variable biasing circuit in PA reduces the second harmonics of TX signals so that it suppresses the VCO pulling and keeps the carrier frequency drift within 18kHz. IEEE 2007 Custom Intergrated Circuits Conference (CICC)1-4244-1623-X/07/$25.00

RF-analog circuit design in scaled SoC

“…10 to keep constant LNA gain [4]. In the case of only considering T C of MOSFET, this temperature dependence is almost linear and is expressed as equation (1).…”

6GHz active-inductor matched duplexer-less LNA/PA design incorporated with a bondwire-antenna

“…Reference [41] claims only a 0.6dB loss through the duplexer but does not show its design. Other designs such as [37] have the transmiter (TX) and receiver (RX) and their respective antennas on separate chips, and thus do not require duplexers.…”

“…40K ohms) connected in series with an ideal voltage to ground. This resistor should emulate the R^s of a current source biasing the transistor as shown in [41]. The drain is biased at a supply voltage Vdd/2 via a hypothetical ideal inductor of value 1H, which acts as RF choke, providing the transistor drain voltage to be set at mid-rail (Vdd/2) in order to obtain maximum linearity.…”