We have systematically studied the electrical properties of heavily Si-doped GaAs grown on the (311)A GaAs surfaces by molecular beam epitaxy. It is found that the conduction type drastically changes from p type to n type with decreasing growth temperature at a critical temperature of ∼430 °C for uniform doping and ∼480 °C for the δ-doping case, with the transition temperature width as narrow as ∼50 °C for both cases. The highest hole density obtained for uniformly doped layers was 1.5×1020 cm−3, while for δ-doped layers a sheet hole density as high as 2.6×1013 cm−2 was achieved, which is the highest sheet hole density ever reported for δ-doped p-type GaAs.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.