Electrical properties of heavily Si-doped (311)<i>A</i> GaAs grown by molecular beam epitaxy

Agawa, Kenichi; Hirakawa, Kazuhiko; Sakamoto, Naomichi; Hashimoto, Y.; Ikoma, Toshiaki

doi:10.1063/1.112136

Cited by 38 publications

(19 citation statements)

References 15 publications

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“…Diodes passivated with A1GaAs possessed an average ideality factor (q) of 2.8. This is in very good accord with the published figure of r I = 2.7 for AlGaAs-passivated GaAs lateral junctions [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. We postulate that extra recombination at the A1GaAs-GaAs boundary could be the cause of the high ideality factor.…”

Section: Passivated Diode Structuresupporting

confidence: 81%

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Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate

Gardner

Woods

Domínguez

et al. 1996

J Mater Sci: Mater Electron

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We have investigated the electrical properties of lateral pn junctions formed by Si-doped GaAs MBE growth over a patterned GaAs substrate. Current-voltage and capacitance-voltage profiling have revealed dissimilar doping profiles, dependent on the junction location. Junctions located at the lower facet-flat intersection possessed an abrupt profile and exhibited good rectifying characteristics with ideality factors (q) of approximately 2. Those situated at the upper facet-flat boundary tended towards linearly graded and displayed poor rectifying properties, with q > 2. The evolution of different minor facets at both lower and upper intersections and silicon doping behaviour on these respective surfaces is proposed as a means of explaining the differences in performance of the junction types. A dip formation present on the facet has been identified as being a cause of the poor rectification performance.

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Section: Passivated Diode Structuresupporting

confidence: 81%

“…However, the conductivity type for silicon doping on the (311)A surface is a function of the growth conditions. Under low As4: Ga flux ratio and high growth temperatures, p-type material is grown [7][8][9][10]. For the converse conditions, Si-doped (3 1 1)A material is rendered n-type.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate

Gardner

Woods

Domínguez

et al. 1996

J Mater Sci: Mater Electron

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“…This is very attractive for the growth of high quality ͑Al,Ga͒As structures with sharp and flat heterointerfaces. 11 Highest hole mobility in modulation-doped GaAs/͑Al,Ga͒As heterostructures, 12 highest bulk, and sheet hole densities were achieved in MBE-grown Si bulk-and delta-doped GaAs͑311͒A. 13 The amphoteric nature of Si on GaAs͑311͒A has been utilized in the development of devices on patterned substrates by one-step epitaxy.…”

Section: Introductionmentioning

confidence: 98%

Si doping for n- and p-type conduction in AlxGa1−x As grown on GaAs(311)A by molecular-beam epitaxy

Kassa

Hey

2003

Journal of Applied Physics

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For Si-doped AlxGa1−xAs(311)A with 0⩽x⩽1 grown by molecular-beam epitaxy, a systematic study of electrical properties is performed depending on growth conditions. A phase diagram for the conversion of the conduction type as a function of growth temperature and V/III beam-equivalent pressure ratio is established for AlxGa1−xAs layers. To achieve n-type conduction in AlxGa1−xAs layers, high arsenic flux and growth temperatures not exceeding about 550 °C are required, whereas low arsenic flux and higher growth temperatures lead to p-type conduction. For Si-doped AlxGa1−xAs(311)A layers with x>0.5, p-type conduction is reported with a Si doping efficiency above 90%. Based on these results, all-Si-doped strained-layer In0.2Ga0.8 As/GaAs(311)A quantum-well laser structures with x=0.5 and 0.8 in the cladding layers were grown. Compared with reference laser structures grown on GaAs(100) and doped with Be, a better lasing performance of the all-Si-doped (311)A-oriented single quantum-well laser structures is obtained. For 1.5 mm long conventional broad area lasers, we achieve a lower threshold current density (280 A/cm2), an internal quantum efficiency of about 85%, and an internal optical loss of 9 cm−1.

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“…The 2DES was grown under similar MBE growth conditions: The substrate temperature during the growth of the GaAs/AlGaAs interface and the AlGaAs spacer was kept the same as in the 2DHS case and was reduced only when the dopants were introduced [14]. The interface morphology of the 2DES sample should therefore closely resemble that of the 2DHS samples.…”

mentioning

confidence: 99%

“…Formation of these channels has previously been reported [6][7][8] We also studied the COs in a two-dimensional electron system (2DES) at the GaAs/AlGaAs (311)A interface. The 2DES was grown under similar MBE growth conditions: The substrate temperature during the growth of the GaAs/AlGaAs interface and the AlGaAs spacer was kept the same as in the 2DHS case and was reduced only when the dopants were introduced [14]. The interface morphology of the 2DES sample should therefore closely resemble that of the 2DHS samples.…”

mentioning

confidence: 99%

Highly anisotropic commensurability oscillations in two-dimensional holes at the GaAs/AlGaAs A interface

Yau¹,

Lü²,

Manoharan³

et al. 2000

Physica E: Low-dimensional Systems and Nanostructures

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Measurements of commensurability oscillations in GaAs/AlGaAs two-dimensional (2D) hole systems grown on GaAs (311)A substrates reveal a remarkable anisotropy: the amplitude of the measured commensurability oscillations along the [233] direction is about 100 times larger than along [011]. For 2D electron systems at similar interfaces, however, we observe nearly isotropic oscillations, suggesting that the anomalous anisotropy is intrinsic to GaAs 2D holes at the (311)A interface. GaAs/AlGaAs heterojunctions and quantum wells, grown on GaAs (311)A substrates and modulation-doped with Si, are of considerable current interest. These structures can contain very high mobility two-dimensional hole systems (2DHSs), and have already shown a number of novel phenomena including signatures of magnetic-fieldinduced Wigner crystallization [1] and metal-insulator transition at zero magnetic field [2][3][4][5]. These systems are also known to exhibit an in-plane transport anisotropy [6][7][8]; the mobility along the [233] direction is typically larger than along [011] by a factor of 2 to 5. Here we report the observation of commensurability oscillations (COs) revealing a surprisingly large anisotropy in the amplitude of the COs measured along these two directions in this system. We recall that COs refer to the oscillations in the magnetoresistance of a 2D carrier system whose density has a lateral periodic modulation [9,10]. In a simple, semiclassical model [11], the oscillations can be related to the classical cyclotron orbit diameter of the carriers becoming commensurate with a multiple integer of the period a of the potential. The anisotropy of the COs we observe in the 2DHSs is too large to be explained by a simple argument based on mobility anisotropy.Our samples were grown by molecular-beam epitaxy (MBE) on GaAs (311)A substrates, and have lowtemperature mobility in the range of 1.7×105 cm 2 /V s to 1.6×106 cm 2 /V s. The sample structure is shown schematically in Fig. 1. Arrays of 1000Å-thick PMMA strips were defined perpendicular to the two arms of an L-shaped Hall bar pattern which was made by electronbeam lithography and 5000Å-deep wet etching. The two arms of the Hall bar were aligned along the [233] and [011] directions. The periods of PMMA strips range from 2000Å to 3000Å and their widths equal half of their periods. A front gate was made by evaporating 50Å of Ti and 2000Å of Au. We measured the longitudinal magnetoresistance as a function of perpendicular magnetic field B, at T ≈ 0.5K using a standard low-frequency lock-in technique.We studied 2DHSs confined in both triangular and square quantum wells. The low-B magnetoresistances measured along the [233] and [011] directions are represented by R [233] and R [011] , respectively. Both R [233] and R [011] are measured with the current running perpendicular to the direction of the PMMA strips (see Fig. 1). We find an enormous amplitude anisotropy in the COs measured along the [233] and [011] directions. In the triangular well sample, as shown in Fig. 2, we ob...

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Electrical properties of heavily Si-doped (311)A GaAs grown by molecular beam epitaxy

Cited by 38 publications

References 15 publications

Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate

Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate

Si doping for n- and p-type conduction in AlxGa1−x As grown on GaAs(311)A by molecular-beam epitaxy

Highly anisotropic commensurability oscillations in two-dimensional holes at the GaAs/AlGaAs A interface

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