A 900 μm2 BiCMOS Temperature Sensor for Dynamic Thermal Management

Abstract

<jats:p>The extreme miniaturization of electronic technologies has turned varying and unpredictable temperatures into a first-class concern for high performance processors which mitigate the problem employing dynamic thermal managements control systems. In order to monitor the thermal profile of the chip, these systems require a collection of on-chip temperature sensors with strict demands in terms of area and power overhead. This paper introduces a sensor topology specially tailored for these requirements. Targeting the 40 nm CMOS technology node, the proposed sensor uses both bipolar and CMOS transistors, benefiting from the stable thermal characteristics of the former and the compactness and speed of the latter. The sensor has been fully characterized through extensive post-layout simulations for a temperature range of 0 ∘ C to 100 ∘ C , achieving a maximum error of ±0.9 ∘ C / considering 3 σ yield and a resolution of 0.5 ∘ C . The area—900 μ m 2 , energy per conversion—1.06 nJ, and sampling period—2 μ s, are very competitive compared to previous works in the literature.</jats:p>

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“…And the temperature sensor is calibrated to improve the accuracy of the temperature sensor. Aparicio et al [53] introduces a sensor topology specifically tailored for these requirements. Targeting the 40 nm CMOS technology node, the proposed sensor uses both bipolar and CMOS transistors, benefiting from the stable thermal characteristics of the former and the compactness and speed of the latter.…”

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“…Due to their small form factor, low power consumption, low cost and convenient digital interface capability, integrated temperature sensor chips have been widely used for thermal monitoring in various smart applications such as the smart farm, smart factory, smart health, and so on. Integrated temperature sensor chips can be implemented in various ways depending on the sensing element which is generally chosen from the threshold voltage, mobility, resistance or thermal voltage; the measured signal type, which is generally chosen from the voltage, current, frequency, or delay time; and the overall architecture which is basically determined by the chosen sensing element and the measured signal type [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 ].…”