A 94 GHz monolithic high output power amplifier

Abstract

A two-stage monolithic W-band power amplifier using 0.1 -pm pseudomorphic AIGaAs/lnGaAs/GaAs T-gate power HEMT process has been designed, fabricated, and tested. This MMlC PA exhibits 8 dB linear gain and a maximum output power of 300mW with 10.5% peak power-added efficiency at 94GHz.The substrate thickness is 2 mil Eo take advantage of lower thermal resistance as well as smaller via holes and a more compact chip layout. To our knowledge, the 300-mW output power represents the highest output power for a single W-band power amplifier chip at this frequency.

Progress in active integrated antennas and their applications

“…Great effort has been spent on developing monolithic integrated circuits at frequencies up to -band. Using the latest 0.1-m pseudomorphic high electron-mobility transistor (pHEMT) technology, for example, a single-chip power amplifier with 300-mW output power at 94 GHz has been recently demonstrated [10]. However, a millimeter-wave radar will typically require transmitting power of a few watts or higher.…”

A Coplanar W-Band Power Amplifier MMIC Using Dual-Gate HEMTs

“…Due to the high losses, when combining several MMIC power amplifier chips in millimeter-wave waveguide modules [1,2], it is desirable to obtain high output power from a single chip. Recently, power amplifiers with common source transistors on GaAs and InP have been published with excellent results [3][4][5][6][7].…”