Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

“…From the reliability point of view, the high bias conditions used to get the maximum performance from these devices induce extremely high electric field in the device that can generate severe device degradation. This reliability aspect has not been largely investigated and, in particular, the multiple effects of highly energetic carriers (hot-electrons), high electric field and high power densities, present within the device active area have been little investigated [4][5][6][7][8], but there is the need of a much deeper investigation.…”

Gate-Geometric Recessed Nanoscale <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$</tex></formula>&#x2013;<formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$</tex></formula> Double-Gate HEMT for High Breakdown

“…However, reducing the gate length below 100 nm leads to onset of short-channel effects (SCEs) in the devices [3], [4]. Double-gate HEMT (DGHEMT) has stepped up a new paradigm to reduce SCEs in the field of compound semiconductor devices [7]. An increase in gate controllability, double current density, and transconductance results in enhanced device performance in terms of drain-induced barrier lowering, cutoff frequency (f T ), maximum frequency of oscillation (f max ), intrinsic P and R noise parameters, and extrinsic NF min , G ass , and R n noise parameters over its single-gate counterpart [5], [6].…”

Metal Insulator Gate Geometric HEMT: Novel Attributes and Design Consideration for High Speed Analog Applications

“…However, some analog applications of HEMTs are still limited by the reduced breakdown voltage of these devices, which limits their power applications. In general, this problem is related to the properties of InAlAs/InGaAs material systems, in particular due to enhanced impact ionization effects in the narrow bandgap (0.73 eV) of In 0.53 Ga 0.47 As or tunneling due to low Schottky barrier height (0.66 eV) of In 0.52 Al 0.48 As [3][4][5][6][7][8][9][10]. Thus, ever since its development, significant efforts have been made to improve the speed and breakdown voltage of the device.…”