A &amp;#x00B1;0.4&amp;#x00B0;C (3&amp;#x03C3;) &amp;#x2212;70 to 200&amp;#x00B0;C time-domain temperature sensor based on heat diffusion in Si and SiO&lt;inf&gt;2&lt;/inf&gt;

Vroonhoven, Caspar van; d'Aquino, Dan; Makinwa, Kofi A. A.

doi:10.1109/isscc.2012.6176976

Cited by 7 publications

(3 citation statements)

References 2 publications

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“…The PDΣ∆M is incorporated into a two-step (zoom) ADC architecture to increase its speed and minimize its inherent (cosine) non-linearity [10]. As shown in Fig.…”

Section: Circuit Descriptionmentioning

confidence: 99%

“…During the coarse conversion, Φ0 and Φ1 are set to cover the full temperature range, and a 64-step conversion is used to make a 4-bit estimate of the ETF's phase (Φcoarse). In contrast to [10], which used a SAR ADC in the coarse conversion, a Σ∆M is used here because of the its robustness to thermal noise and its compatibility with chopping and HDI. During the fine conversion, Φ0 and Φ1 are set to straddle Φcoarse, such that Φ1 -Φ0 = 11.25°.…”

Section: Circuit Descriptionmentioning

confidence: 99%

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A 0.008-mm<sup>2</sup> area-optimized thermal-diffusivity-based temperature sensor in 160-nm CMOS for SoC thermal monitoring

Sonmez

Quan

Foti

et al. 2014

ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)

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An array of temperature sensors based on the temperature-dependent thermal diffusivity of bulk silicon has been realized in a standard 160-nm CMOS process. The sensors achieve an inaccuracy of ±2.4 °C (3σ) from -40 to 125 °C with no trimming and ±0.65 °C (3σ) with a one temperature trim. Each sensor occupies 0.008 mm 2 , and achieves a resolution of 0.21 °C (rms) at 1 kSa/s. This combination of accuracy, speed, and small size makes such sensors well suited for thermal monitoring in microprocessors and other systems-on-chip.

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“…The PDΣ∆M is incorporated into a two-step (zoom) ADC architecture to increase its speed and minimize its inherent (cosine) non-linearity [10]. As shown in Fig.…”

Section: Circuit Descriptionmentioning

confidence: 99%

Section: Circuit Descriptionmentioning

confidence: 99%

A 0.008-mm<sup>2</sup> area-optimized thermal-diffusivity-based temperature sensor in 160-nm CMOS for SoC thermal monitoring

Sonmez

Quan

Foti

et al. 2014

ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)

View full text Add to dashboard Cite

show abstract

“…Thermal diffusivity (TD) sensors [8], and resistor-based sensors [9] have also demonstrated good accuracy at high temperatures. Compared to BJT-based sensors, however, the milliwatt-level power dissipation of TD sensors, and the 2point calibration required by precision resistor-based TDCs makes them less suitable for automotive applications.…”

Section: Introductionmentioning

confidence: 99%

A BJT-Based Temperature-to-Digital Converter With a ±0.25 °C 3$\sigma$ -Inaccuracy From −40 °C to +180 °C Using Heater-Assisted Voltage Calibration

Yousefzadeh

Makinwa

2020

IEEE J. Solid-State Circuits

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This paper presents a BJT-based Temperature-to-Digital-Converter (TDC) that achieves ±0.25 • C 3σ-inaccuracy from −40 • C to +180 • C after a heater assisted voltage calibration. Its switched-capacitor (SC) ADC employs two samplingcapacitors, and thus the minimum number of critical sampling switches, which minimizes the effects of switch leakage at high temperatures and improves accuracy. The TDC is also equipped with an on-chip heater, with which the sensing BJTs can be rapidly (<0.5 s) heated to about 110 • C. This, in turn, enables voltage calibration at two different temperatures without the need for a temperature-controlled environment. Realized in a 0.16 µm standard CMOS, the TDC, including the on-chip heater, occupies 0.15 mm 2 and operates from 1.8 V .

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An Energy‐Efficient Fully On‐Chip CMOS Temperature Sensor for Portable Applications With an RFoM of 2.79 pJ.K²

Jayaram,

Sreehari

2024

Circuit Theory & Apps

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This article describes an energy‐efficient, low‐power CMOS temperature sensor suitable for portable applications. The sensor's front‐end circuitry is designed with a reference voltage (V), complementary to absolute temperature (CTAT) voltage (V), and ramp voltage generators. The ramp voltage (V) is produced by utilizing a current reference circuit. The ramp voltage is compared with independent and temperature‐dependent voltages to perform the voltage‐to‐frequency conversion. Conversion from frequency to digital output is achieved through an asynchronous counter with an on‐chip oscillator. The proposed design is realized in a 0.18‐m CMOS technology and attains a power usage of 604.4 nW at 27°C with an operating voltage of 0.5 V. Furthermore, it obtains an inaccuracy of +0.71/−0.73°C over −40°C to 125°C temperature range with an active area of 0.025 mm2. Moreover, the designed sensor circuit offers a resolution of 0.17°C with an energy conversion of 96.7 pJ.

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A ±0.4°C (3σ) −70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO<inf>2</inf>

Cited by 7 publications

References 2 publications

A 0.008-mm<sup>2</sup> area-optimized thermal-diffusivity-based temperature sensor in 160-nm CMOS for SoC thermal monitoring

A 0.008-mm<sup>2</sup> area-optimized thermal-diffusivity-based temperature sensor in 160-nm CMOS for SoC thermal monitoring

A BJT-Based Temperature-to-Digital Converter With a ±0.25 °C 3$\sigma$ -Inaccuracy From −40 °C to +180 °C Using Heater-Assisted Voltage Calibration

An Energy‐Efficient Fully On‐Chip CMOS Temperature Sensor for Portable Applications With an RFoM of 2.79 pJ.K²

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A &#x00B1;0.4&#x00B0;C (3&#x03C3;) &#x2212;70 to 200&#x00B0;C time-domain temperature sensor based on heat diffusion in Si and SiO<inf>2</inf>

Cited by 7 publications

References 2 publications

A 0.008-mm<sup>2</sup> area-optimized thermal-diffusivity-based temperature sensor in 160-nm CMOS for SoC thermal monitoring

A 0.008-mm<sup>2</sup> area-optimized thermal-diffusivity-based temperature sensor in 160-nm CMOS for SoC thermal monitoring

A BJT-Based Temperature-to-Digital Converter With a ±0.25 °C 3$\sigma$ -Inaccuracy From −40 °C to +180 °C Using Heater-Assisted Voltage Calibration

An Energy‐Efficient Fully On‐Chip CMOS Temperature Sensor for Portable Applications With an RFoM of 2.79 pJ.K2

Contact Info

Product

Resources

About

A ±0.4°C (3σ) −70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO<inf>2</inf>

An Energy‐Efficient Fully On‐Chip CMOS Temperature Sensor for Portable Applications With an RFoM of 2.79 pJ.K²