A Behavior Electrical Model of the MOSFET Using Matlab/Simulink

Baghdadi, Mohamed; Elwarraki, Elmostafa; Imane, Ait Ayad

doi:10.1109/gpecom55404.2022.9815717

Cited by 3 publications

(1 citation statement)

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“…However, several limitations still exist that can make it difficult to model SiC MOSFETs accurately. One of the main limitations is the complexity of the SiC MOSFET electro-thermal behavior [13], [14], [15], [16], [17], [18], [19], [20], [21], [22], [23], [24]. The behavior is multi-physics in nature and the effects of temperature, parasitic elements, device degradation, and the manufacturing process are difficult to model accurately.…”

Section: B State Of the Art Overviewmentioning

confidence: 99%

Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations

et al. 2023

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The paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC MOSFET, which incorporates the dynamics of both electrical and thermal variables. It offers a suitable computational complexity for simulating transients in complex power converters. The objective is to define a model that enables multi-scale time simulations and facilitates rapid power converter design in system-level tools such as Simulink. Additionally, the model aims to achieve simulation accuracy comparable to device-level models for the next generation of SiC MOSFETs. The paper demonstrates the complete test bench measurement procedure for the device. This procedure is essential for experimentally extrapolating the intrinsic characteristics and developing a model-reduction approach based on electro-thermal modeling. The approach strikes a balance between computational complexity and level of detail. The proposed model has been seamlessly integrated into Simulink to simulate a 3-phase inverter for several grid cycles at the grid frequency. To evaluate the model's validity, the predicted inverter performance is compared with experimental measurements. These simulations require significantly less time compared to those based on LTspice models.INDEX TERMS Model-based design, multi-scale, simulation, power measures, power converters, silicon carbide (SiC).

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Section: B State Of the Art Overviewmentioning

confidence: 99%

Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations

et al. 2023

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Computer Modeling of the Electric Vehicle Traction System Based on a Boost DC/DC-converter

Ivanov,

Khazieva

2023

2023 Dynamics of Systems, Mechanisms and Machines (Dynamics)

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Power Semiconductor Junction Temperature and Lifetime Estimations: A Review

Morel,

Morel

2024

Energies

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The lifetime of power electronic systems is the focus of both the academic and industrial worlds. Today, compact systems present high switching frequency and power dissipation density, causing high junction temperatures and strong thermal fluctuations that affect their performance and lifetime. This paper is a review of the existing techniques for the electro-thermal modelling of Mosfet and IGBT devices regarding lifetime estimation. The advantages and disadvantages of the methodologies used to achieve lifetime prediction are discussed, and their benefits are highlighted. All the factors required to predict power electronic device lifetime, including Mosfet and IGBT electrical models, the computation of power losses, thermal models, temperature measurement and management, lifetime models, mission profiles, cycle counting, and damage accumulation, are described and compared.

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A Behavior Electrical Model of the MOSFET Using Matlab/Simulink

Cited by 3 publications

References 0 publications

Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations

Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations

Computer Modeling of the Electric Vehicle Traction System Based on a Boost DC/DC-converter

Power Semiconductor Junction Temperature and Lifetime Estimations: A Review

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