A behavioral model for MCT surge current analysis in pulse discharge

Chen, Wanjun; Sun, Ruize; Xiao, Kun; Zhu, Hongbo; Peng, Chao-Fei; Zhaoyang, Ruan; Ruan, Jianxin; Zhang, Bo; Li, Zhaoji

doi:10.1016/j.sse.2014.04.044

Cited by 19 publications

(7 citation statements)

References 12 publications

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“…As stated in section I, we focus on the low energy PDCs. In such cases, capacitance (C), power limitation (P ) and voltage limitation (V L ) are typically on the order of 0.1 µF, 0.1 W and 1000 V respectively [4], [18]. The parameters of our test PDC are listed in Table I.…”

Section: Experimental Details a Pulse Discharge Circuitmentioning

confidence: 99%

“…By substituting (4) into (1), and with the boundary condition in (5), we can obtain the solution to (1) for constant power case, which can be expressed as…”

Section: B Modellingmentioning

confidence: 99%

“…In a pulse discharge circuit (PDC), as presented in Fig.1, the energy stored in high voltage capacitor should be released as fast and efficient as possible to produce surge current of high peak, several kA, and high rise rate, kA•µs -1 . Thereafter, the electric energy is transferred to the loads (e.g., resistor and inductor) via the surge current within hundreds of nanoseconds [4]- [6], which can effectuate the subsequent actions of the loads (e.g. the explosion of metal foil in detonator).…”

Section: Introductionmentioning

confidence: 99%

“…the explosion of metal foil in detonator). MOStrolled Thyristor (MCT) is the natural switching unit for PDCs owing to the surge in the current capability without current saturation, but with a high current density up to kA•cm -2 and a high current rising rate of ∼10 2 kA•µs -1 , besides Metal-Oxide-Silicon (MOS) gating [4], [7]. A conventional MCT structure requires a gate voltage to form OFF-FET channel extracting carriers, and henceforth realizing a high blocking capability, which complicates the driver circuit.…”

Section: Introductionmentioning

confidence: 99%

“…The leakage current can amplify by three orders of magnitude to ∼0.1 mA following γ-ray exposures up to thousands of Gy(SiO 2 ). For the case of low energy PDC, such as slapper detonator [6], the voltage of charging source is typically in the range of 1000 to 3000 V, and its output power is usually on the order of 0.1-1 W [4], [18]. After γ-ray exposures, the power consumption in AS-MCT is comparable with the output power of charging source.…”

Section: Introductionmentioning

confidence: 99%

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Ionization Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capabilities. The anode short MCT (AS-MCT) is distinguished from the conventional MCT by an anode-short structure, which forms an extracting path for the leakage current at the gate-ground and develops a normally-off characteristic. The AS-MCTs are ideal switches for pulse discharge application. As a composite structure made of metal-oxide-silicon and bipolar junction transistors, AS-MCT is susceptible to ionization damage. This work reports the experimental results for the degradation of zero-load (or short) pulse discharge circuit characteristics induced by the ionization damage of its AS-MCT switch following cobalt-60 γ-ray dose up to 9160 Gy(SiO2). The radiation-induced leakage current in AS-MCT accounts for the degradations of charging time and peak surging current of the pulse discharge circuit. These degradations show a "tick"-like dependence on the γ-ray dose which are recoverable after high dose exposures, thousands of Gy(SiO2). From device and circuit physics perspectives, the damages on pulse discharge circuit are modelled, and then, this paper proposes, the mechanism behind the characteristics degradation of pulse discharge circuit from the total ionization dose damage of AS-MCT switch.

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Section: Experimental Details a Pulse Discharge Circuitmentioning

confidence: 99%

“…By substituting (4) into (1), and with the boundary condition in (5), we can obtain the solution to (1) for constant power case, which can be expressed as…”

Section: B Modellingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Ionization Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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3D Interdigital Electrodes Dielectric Capacitor Array for Energy Storage Based on Through Glass Vias

Fang

Gao

Chen

et al. 2022

Adv Materials Technologies

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It is urgent to develop small-scale high power pulse systems with high performance, with the further necessity of high-power pulse system in the military and civilian field, such as ERA (Electric Reactive Armor) and AED (Automated External Defibrillator).Dielectric capacitor, combining stable energy storage with high power, is the core device that has been widely applied in pulsed power system. The dielectric capacitors possess the highest power density as compared with other capacitors, such as polymer capacitors, electrochemical capacitor, and etc. [6][7][8][9][10] However, their energy storage capability lags behind due to the lower energy density. The total size and weight of pulsed power system would be reduced significantly if equipping the capacitors with larger energy density. The limited number of charges on the surface of electrodes results in the low energy density of dielectric capacitors. [2][3][4] Many efforts have been done for increasing the specific surface area of the electrodes. Recently, the nanostructured capacitors with large specific surface areas are applied to achieve major advances in energy density of dielectric capacitors. [10,11] The nanostructured designs of dielectric capacitors can be achieved by two methods: a self-assembly technique for the ultracompact capacitors, [3,4,[12][13][14][15][16][17][18][19][20] and metal-insulator-metal (MIM) capacitors in porous templates [2,3,[11][12][13][14][15][16][17][18][19][20][21] (a 3D nanopore template of anodic aluminum oxide (AAO) with multilayer film deposition into the nanopores, and a nanopillars silicon template with multilayer film deposition). These methods for increasing the specific surface area of the electrodes are demonstrated to effectively improve the energy density of capacitors. The ultrahigh capacitance density of dielectric capacitor was reported to 100 uF cm −2 , which is 105 larger than that of planer dielectric capacitors. [3,4,[18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] However, these nanostructured dielectric capacitors just use MIM thin films in 3D nanopore template, which cannot undertake such large voltage in pulse power systems.Dielectric material capacitor is the best choose for ultrahigh pulse power energy storage. The development of dielectric capacitors with both ultrahigh-power density and energy storage density is urgent. 3D dielectric capacitors exceed the conventional planar dielectric capacitors in terms of structure and performance, break through the energy storage limit of

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A SiC gate turn-off thyristor with high di/dt for fast switching-on applications

Li¹,

Zhang²,

Li³

et al. 2021

Semicond. Sci. Technol.

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High di/dt 4H-silicon carbide (SiC) gate turn-off thyristors (GTOs) are investigated and developed for fast switching-on application. This work has focused on accelerating the turn-on process to improve the di/dt characteristic, and the n-base dopant concentration is carefully designed to increase the injection efficiency of top P+N junction. With reducing n-base dopant concentration from 2.3 × 1017cm−3 to 6.8 × 1016cm−3, the injection efficiency is increased about 18%, and consequently the current rise-up process and subsequent lateral propagation of the anode current are obviously accelerated. Experimental results show that the di/dt capability is greatly improved and a high di/dt of 126 kA cm−2 μs−1 is obtained. The excellent di/dt performance makes the designed 4H-SiC GTO a promising candidate for fast switching-on application.

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A behavioral model for MCT surge current analysis in pulse discharge

Cited by 19 publications

References 12 publications

Ionization Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor

Ionization Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor

3D Interdigital Electrodes Dielectric Capacitor Array for Energy Storage Based on Through Glass Vias

A SiC gate turn-off thyristor with high di/dt for fast switching-on applications

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