A behavioral model for the non-linear on-resistance in sample-and-hold analog switches

Prodanov, William; Valle, Maurizio

doi:10.1109/ecctd.2005.1522922

Cited by 4 publications

(2 citation statements)

References 9 publications

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“…A more accurate and practical behavioral model may be obtained using the MOS drain current approximations presented here [11]. More IS r.. ID (if)/lif specifically, the toolbox presented here may be used in order to model the S&H on-resistance (RON) behavior.…”

Section: A Practical Applicationmentioning

confidence: 99%

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A fully-automatic CAD toolbox for a MOS drain current model and its parameters extraction

Prodanov

Valle

2006 Ph.D. Research in Microelectronics and Electronics

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This paper presents a CAD toolbox for a compact formulation of the MOS drain current. The formulation is based on the popular ACM model: the approximations introduced in the model preserve the drain-to-source device symmetry and the continuity between all regions of operation (i.e. weak, moderate and strong inversion). The major issue of the availability of the technological parameters is faced and a parameters extraction approach in a fully automated procedure were implemeted in the same toolbox. Finally, an example of application of the toolbox is presented. In the example a behavioral analysis of a sample-and-hold circuit is performed

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Section: A Practical Applicationmentioning

confidence: 99%

“…Indeed, other parameters besides accuracy must be considered like simulation effort, circuit simulators availability, etc. A deeper insight of using the toolbox to model the RON effect can be find in [11].…”

Section: Csmentioning

confidence: 99%