A beneficial application of backside SIMS for the depth profiling characterization of implanted silicon

Abstract

After ion implantation, annealing is needed to activate dopant and recover crystalline. However, in some annealing conditions there is a possibility that activation annealing forms defects in the implanted region, which may cause errors in SIMS depth profiles. The purpose of this study is to make clear the influence of defects generated during annealing on the conventional front-side SIMS (FSS) depth profiles, and to provide proper measurement condition to get accurate depth profiles using back-side SIMS (BSS) technique as another beneficial application. In this study, BF 2 were implanted into crystalline silicon, and three different samples were treated, respectively, as implanted, 750 and 900• annealing. In an as-implanted sample, BSS depth profiles of boron confirmed those obtained by FSS. On the other hand, in annealed samples, BSS depth profiles were steeper than those of FSS. This result suggests that the degradation of depth resolution in FSS cannot be explained only by the effect of ion mixing due to primary ions, but may be related with the crystalline structure in the implanted region. Therefore, BSS techniques can also be indispensable for getting more precise depth profiles in the implanted region of silicon.

Accurate analysis of shallowly implanted solar wind ions by SIMS backside depth profiling

“…This technique has been previously applied in the semiconductor industry for analysis of ultrashallow ion implants or impurities (e.g., Jackman et al, 1990;Yeo et al, 2002;Yeo et al, 2003;Fujiyama et al, 2011). We developed this technique further in our laboratory for the application to solar wind analysis.…”

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

“…329 The paper described how boron difluoride had been implanted in crystalline silicon and then how the material was treated in three different ways: left un-annealed, annealed at 750 C and annealed at 900 C. In the un-annealed sample, the results of front-and backsided SIMS were in good agreement. A study by Fujiyama and colleagues discussed the influence of these errors on conventional front-sided SIMS depthprofile measurements and then developed robust measurement conditions for the use of back-sided SIMS.…”

“…A study by Fujiyama and colleagues discussed the influence of these errors on conventional front-sided SIMS depthprofile measurements and then developed robust measurement conditions for the use of back-sided SIMS. 329 The paper described how boron difluoride had been implanted in crystalline silicon and then how the material was treated in three different ways: left un-annealed, annealed at 750 C and annealed at 900 C. In the un-annealed sample, the results of front-and backsided SIMS were in good agreement. For both of the annealed samples, the front-and back-sided SIMS results differed markedly, with the depth profiles obtained using back-sided SIMS being significantly more steep than those from front-sided measurements.…”

Multi-Scale Deconvolution of Mass Spectrometry Signals

“…To this aim, Depth profiling in secondary ion mass spectrometry (SIMS) has been extensively used as an informative technique in the semiconductor and electronic devices fields due to its high sensitivity, quantification accuracy and depth resolution (Fujiyama et al, 2011;Seki et al, 2011). However, the depth resolution in SIMS analysis is still limited to provide reliable and precise information in very thin structures such as delta layers, abrupt interfaces, etc.…”