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After ion implantation, annealing is needed to activate dopant and recover crystalline. However, in some annealing conditions there is a possibility that activation annealing forms defects in the implanted region, which may cause errors in SIMS depth profiles. The purpose of this study is to make clear the influence of defects generated during annealing on the conventional front-side SIMS (FSS) depth profiles, and to provide proper measurement condition to get accurate depth profiles using back-side SIMS (BSS) technique as another beneficial application. In this study, BF 2 were implanted into crystalline silicon, and three different samples were treated, respectively, as implanted, 750 and 900• annealing. In an as-implanted sample, BSS depth profiles of boron confirmed those obtained by FSS. On the other hand, in annealed samples, BSS depth profiles were steeper than those of FSS. This result suggests that the degradation of depth resolution in FSS cannot be explained only by the effect of ion mixing due to primary ions, but may be related with the crystalline structure in the implanted region. Therefore, BSS techniques can also be indispensable for getting more precise depth profiles in the implanted region of silicon.

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Although changes in the layer structure of an OLED as well as the diffusion phenomena in cathode materials and in EIM (electron-injection material) have been discussed actively, fundamental questions have remained unanswered. Using backside SIMS technique after optimised preprocessing of OLED samples, it has been possible to measure more accurate profiles of diffused elements, which was quite difficult under conventional SIMS analysis from the front surface due to so called knock-on effect. We have utilized the backside SIMS in the deterioration evaluation of OLED devices under the high temperature storage condition. Diffusion of EIM has been found with the change in layer structure depending on Tg (glass transition temperature) of HTM (hole transport material). On the basis of the analysis, it was found that the diffusion of EIM and the change in the layer structure depended on the Tg (glass transition temperature) of the HTM (hole-transport material) at the deterioration evaluation during high-temperature storage.

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