SIMS quantification of low concentration of nitrogen doped in silicon crystals

Fujiyama, N.; Karen, Akiya; Sams, D.B.; Hockett, R. S.; Shingu, Kazue; Inoue, Naohisa

doi:10.1016/s0169-4332(02)00700-6

Cited by 6 publications

(9 citation statements)

References 1 publication

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“…Samples utilized in this study were 2 types of the commercial‐based Si wafer with different oxygen concentrations indicated in Table . The contained oxygen concentration of each sample was estimated by utilizing the “Raster Change method” with magnetic‐sector type D‐SIMS. The oxygen distribution for both samples was confirmed to be constant in depth by D‐SIMS measurements.…”

Section: Methodsmentioning

confidence: 99%

“…The residual components cause the background signal and could be an obstacle to the high sensitivity detection of contained component in the samples. With respect to the analysis of bulk samples by microscope mode in Dynamic‐SIMS (D‐SIMS), it is well known that a high sputtering rate (primary ions of high current density) enables to increase the intensity of the contained components by sputtering a larger depth in unit time . On the other hand, the intensity of the residual components is independent of the sputtering rate because they can be regarded as molecular atoms coming from analytical chamber and ionized at the sample's surface.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, a higher sputtering can achieve relatively decreasing the proportion of the background component to the contained one. As the application of this, Raster Change Method has been developed as a valuable method to accurately quantify the contained component by microscope mode in magnetic‐sector‐type D‐SIMS.…”

Section: Introductionmentioning

confidence: 99%

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An effect of residual gas component on detected secondary ions during TOF‐SIMS depth profiling and a method to estimate contained component

Sameshima

Yoshikawa

2018

Surface & Interface Analysis

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With regard to Secondary Ion Mass Spectroscopy (SIMS) measurement of atmospheric gas elements, a problem occurs that the detected signal includes background components caused by residual gas along with contained components. Relating to this issue, an available method to quantify the contained components by separating the background ones had been established for Dynamic SIMS. Time‐of‐Flight SIMS with sputtering ion gun has also applied for depth profiling as well as Dynamic SIMS. However, few studies have attempted to investigate the secondary ion behavior of the atmospheric gas elements for depth profiling by Time‐of‐flight SIMS, especially for low concentration levels. In this study, experimental examinations of the secondary ions of the atmospheric gas elements, such as oxygen, hydrogen, and carbon in the silicon substrate, has been conducted in various analytical conditions of TOF‐SIMS depth profiling mode. Under the analytical conditions of our study, it has been proved that the background intensity of these elements was correlated to the sputtering rate. For the analysis of Floating Zone Silicon substrate, the oxygen intensity of the background component was proportional to the inverse number of the sputtering rate. Based on these facts, the total detected intensity of the atmospheric gas elements was able to be separated into the contained components and background ones by changing the sputtering rate during TOF‐SIMS measurement. An experimental result has shown that the contained oxygen concentration in the Czochralsk Silicon substrate estimated by the “TOF‐SIMS Raster Change Method” has successfully agreed with the result by the Dynamic SIMS.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An effect of residual gas component on detected secondary ions during TOF‐SIMS depth profiling and a method to estimate contained component

Sameshima

Yoshikawa

2018

Surface & Interface Analysis

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“…For depth profiling using microprobe‐mode dynamic‐SIMS, it is well known that a higher sputtering rate enables an increase in the secondary ion signal of the desired component while keeping the background signal unchanged 10–12 . Thus, measurement with a higher sputtering rate can successfully produce the signal of the desired component preferentially by lowering the ratio of the background component.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, measurement with a higher sputtering rate can successfully produce the signal of the desired component preferentially by lowering the ratio of the background component. The raster change method 11,12 is an application of this measurement approach. The raster change method has been available for quantifying the components of atmospheric elements in bulk samples as well as samples with thicker layers.…”

Section: Introductionmentioning

confidence: 99%

Behavior and process of background signal formation of hydrogen, carbon, nitrogen, and oxygen in silicon wafers during depth profiling using dual‐beam TOF‐SIMS

Sameshima

Numao

2021

Surface & Interface Analysis

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The behavior and mechanism of background signals during depth profiling of atmospheric elements using dual‐beam time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) have been experimentally investigated for silicon wafers. The background signals of atmospheric elements were found to be inversely proportional to the sputtering rate. Most of the background signals are largely attributable to the accumulation of components through adsorption and ion bombardment in the pre‐equilibrium state. On the other hand, the contribution of real‐time adsorption during the instant after the last sputtering in the equilibrium state is negligible under the present experimental conditions. H2O is dominant in the background formation process of hydrogen and oxygen, which is supported by the higher adsorption coefficients. The background levels of carbon and nitrogen are lower than those of hydrogen and oxygen. Furthermore, the background signal of carbon with respect to the sputtering rate shows a different trend than the other elements. This could be attributed to accumulation in the pre‐equilibrium state. These results indicate that the background levels can be lowered close to those of dynamic‐SIMS by using an extremely high sputtering rate in dual‐beam TOF‐SIMS.

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Mass Spectrometry in Semiconductor Research

Flege

Ensinger

2012

Mass Spectrometry Handbook

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SIMS quantification of low concentration of nitrogen doped in silicon crystals

Cited by 6 publications

References 1 publication

An effect of residual gas component on detected secondary ions during TOF‐SIMS depth profiling and a method to estimate contained component

An effect of residual gas component on detected secondary ions during TOF‐SIMS depth profiling and a method to estimate contained component

Behavior and process of background signal formation of hydrogen, carbon, nitrogen, and oxygen in silicon wafers during depth profiling using dual‐beam TOF‐SIMS

Mass Spectrometry in Semiconductor Research

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