A benzothiadiazole-containing π-conjugated small molecule as promising element for nonvolatile multilevel resistive memory device

Li, Yang; Qian, Qiuhui; Ling, Songtao; Fan, Tiantian; Zhang, Cheng; Zhu, Xiaolin; Zhang, Qijian; Zhang, Ye; Zhang, Jinlei; Shibata, Yu; Yao, Jinlei; Ma, Chunlan

doi:10.1016/j.jssc.2020.121850

Cited by 16 publications

(23 citation statements)

References 55 publications

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“…When the applied electric field overcomes the energy barrier, the traps created by the electron-withdrawing groups were filled, and the conductivity reaches the ON state. The ON state (LRS) slope (blue marked region) of the devices fitted to be around 1.0 indicates the ohmic conduction and denotes the formation of an efficient channel for charge transportation . These results explained that the trap-filled SCLC transport model controlled the switching characteristics of the devices.…”

Section: Resultsmentioning

confidence: 68%

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Improved Resistive Switching WORM Memory Behavior in D-π-A Architectures by Modifying the Terminal Donor Units

Harshini

Angela

Devibala

et al. 2022

ACS Appl. Electron. Mater.

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A series of D-π-A, D-π-D, and A-π-A based push–pull compounds with triarylamine and benzophenone were designed and synthesized for nonvolatile memory applications. All of the compounds showed good solubility in common organic solvents, which permits solution processability. D-π-A based compounds exhibited write-once-read-many (WORM) memory applications, and the compound with a methoxyphenyl substituent exhibited switching with a low threshold voltage of −0.82 V, an ON/OFF current ratio of 102, and a long-lasting retention time of 103 s. The effect of differently functionalized triarylamines on memory behavior was explored by optical, electrochemical, and computational studies. The highest HOMO levels of around ∼5.0 eV and irreversible anodic peaks (0.7–1.3 V) obtained for the compounds facilitate charge injection and switching behavior. Besides, electrochemical and density functional theory studies disclose the charge-transfer mechanism of the D-π-A systems, which is related to the bistability of the devices.

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Section: Resultsmentioning

confidence: 68%

“…The ON state (LRS) slope (blue marked region) of the devices fitted to be around 1.0 indicates the ohmic conduction and denotes the formation of an efficient channel for charge transportation. 43 These results explained that the trap-filled SCLC transport model controlled the switching characteristics of the devices.…”

Section: ■ Introductionmentioning

confidence: 71%

Improved Resistive Switching WORM Memory Behavior in D-π-A Architectures by Modifying the Terminal Donor Units

Harshini

Angela

Devibala

et al. 2022

ACS Appl. Electron. Mater.

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“…This transition from ohmic to trap-filled charge transfer and then back to ohmic conductance proves that the trap-filled space-charge limited current (SCLC) mechanism prevails in these devices. 31 The devices with 14a–d tend to show similar mechanisms depicting the non-volatile WORM memory behavior of the devices.…”

Section: Resultsmentioning

confidence: 93%

Strategical design and synthesis of D–A–D-based quinolines for improved WORM memory performance

et al. 2023

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“…In the low voltage area, the slope of the fitted curve is 1.07, and the current follows ohmic conduction (OC), which is mainly caused by the thermal excitation of the carriers in charge traps. [ 43 ] With the increase of the bias voltage, the traps are gradually filled, and the Fermi level gradually increases, approaching the conduction band. In this region, the slope of the fitted curve is 1.89, which follows the square law ( I ∝ V 2 ) and is called the trap‐filled limited current (TFLC).…”

Section: Resultsmentioning

confidence: 99%

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

Dou

Zhao

Gao

et al. 2022

Macro Chemistry & Physics

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Multi-level memory can greatly improve information density, so it has been widely studied. In this study, a carbazole-based donor-acceptor polymer poly[2,7-9-(heptadecan-9-yl)-9H-carbazole-alt-7H-benzimidazo[2,1a]benz[de]isoquinolin-7-one] (PCz-BB) is synthesized, which exhibits flash-type ternary memory behavior. Further, CdS nanoparticles (NPs) are embedded into the prepared polymer to enhance the storage performance. The current-voltage (I-V) characteristics of memory devices based on PCz-BB:CdS composites and the effect of the embedding ratio of CdS NPs on the memory devices are studied. It is verified that the ON2/ON1/OFF current ratios of the devices at low CdS embedding concentrations are improved, and the threshold voltages are also reduced. The memory device based on the optimal embedding concentration (3 wt% CdS) exhibits a high ON2/ON1/OFF current ratio of 18631:72:1, a low threshold voltage of −0.40/−1.20 V, and excellent stability. The mechanism of resistive switching is explained by the theory of charge traps and conductive filaments. This work provides a new avenue for high-performance multi-level organic electrical storage materials.

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A benzothiadiazole-containing π-conjugated small molecule as promising element for nonvolatile multilevel resistive memory device

Cited by 16 publications

References 55 publications

Improved Resistive Switching WORM Memory Behavior in D-π-A Architectures by Modifying the Terminal Donor Units

Improved Resistive Switching WORM Memory Behavior in D-π-A Architectures by Modifying the Terminal Donor Units

Strategical design and synthesis of D–A–D-based quinolines for improved WORM memory performance

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

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