A bilayer graphene nanoribbon field-effect transistor with a dual-material gate

Owlia, Hadi; Keshavarzi, Parviz

doi:10.1016/j.mssp.2015.06.014

Cited by 14 publications

(5 citation statements)

References 32 publications

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“…x are the (source/drain) self-energies matrices that are calculated by surface Green's functions. The channel current is obtained using Landauer-Buttiker formalism [20,[24][25][26][27][28][29][30].…”

Section: Device Configuration and Computational Methodsmentioning

confidence: 99%

Phosphorene nanoribbon field effect transistor with a dual material gate

Owlia,

Nasrollahnejad,

Fazli

2024

Eng. Res. Express

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In this paper, we present a dual-material gate phosphorene nanoribbon field-effect transistor (DMG-PNRFET) that combines the advantages of a PNRFET with a DMG configuration. In this structure, the difference in the work function creates an extra barrier for band-to-band tunneling from the valence band (VB) to the conduction band (CB) inside the channel leading to lower off-currents. An illustration for transmission coefficients with relevant band diagrams is included to demonstrate energy-resolved current spectrum and tunneling emissions within the transport window for both on and off-states. Results also show that DMG-PNRFET possesses a higher ION/IOFF ratio, delay, and power delay product (PDP) compared to a conventional PNRFET. Hence, the DMG-PNRFET is better suited for digital applications. Our simulations rely on combining the density functional-based tight binding method with the non-equilibrium Green’s function.

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Section: Device Configuration and Computational Methodsmentioning

confidence: 99%

Phosphorene nanoribbon field effect transistor with a dual material gate

Owlia,

Nasrollahnejad,

Fazli

2024

Eng. Res. Express

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“…All calculations required for quantum transport are performed using fully self-consistent tight binding model which is combined with non-equilibrium Green function formalism (NEGF) [17][18][19][20][21]. Advanced Green function of the channel between the source and drain regions can be calculated as follows:…”

Section: Approachmentioning

confidence: 99%

Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor

Owlia¹,

Keshavarzi²,

Nasrollahnejad³

2017

J. Nano- Electron. Phys.

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In this paper, the current-voltage characteristics of a double-gated monolayer armchair graphene nanoribbon field-effect transistor (DG-AGNRFET) is investigated by introducing a Stone-Wales (SW) defect. After changing positions of the defect in width and length of the channel, it is found that the SW defect decreases off current and leads to the further reduction of the off current as the defect moves to the edge. However, this defect has not shown a notable impact on the on current. The results have confirmed the possibility of controlling the electron transport of the DG-AGNRFET by defect engineering can be useful to extend the applications of graphene nanoribbon-based devices. The device has been simulated based on the self-consistent solution of a 3D Poisson-Schrödinger equation using non-equilibrium Green's function (NEGF) formalism.

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“…Mode space and two sub-bands are used to reduce calculations. NEGF formalism is employed to solve Schrodinger equation: [16][17][18] G…”

Section: Numerical Simulation Of Ovdmg-t-cntfetmentioning

confidence: 99%

T-CNTFET with Gate-Drain Overlap and Two Different Gate Metals: A Novel Structure with Increased Saturation Current

Naderi

Tahne

2016

ECS J. Solid State Sci. Technol.

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For the first time, in this paper a tunneling field effect transistor based on semiconductor carbon nanotubes with gate and drain overlap and dual material gate (OVDMG-T-CNTFET) is proposed and simulated using non-equilibrium Green's function (NEGF). This structure uses two metals with different workfunctions. The metal close to source has higher workfunction. This metal controls tunneling at source side of channel and increases ON state current. Drain side impurity penetrates to the channel region or in other words there is an overlap between drain and gate region. It is demonstrated that with proper selection of overlap length, the device static and dynamic behavior is enhanced. The conventional tunneling transistors suffer from low saturation current. The proposed structure considerably enhances the ON current which is important in sensing applications. Furthermore, this structure enhances current ratio, switching speed, unity-current-gain frequency f T , transconductance, subthreshold swing (SS), hot carrier effect, and drain induced barrier lowering (DIBL) in comparison with conventional structure.

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A bilayer graphene nanoribbon field-effect transistor with a dual-material gate

Cited by 14 publications

References 32 publications

Phosphorene nanoribbon field effect transistor with a dual material gate

Phosphorene nanoribbon field effect transistor with a dual material gate

Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor

T-CNTFET with Gate-Drain Overlap and Two Different Gate Metals: A Novel Structure with Increased Saturation Current

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