Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor

Abstract

In this paper, the current-voltage characteristics of a double-gated monolayer armchair graphene nanoribbon field-effect transistor (DG-AGNRFET) is investigated by introducing a Stone-Wales (SW) defect. After changing positions of the defect in width and length of the channel, it is found that the SW defect decreases off current and leads to the further reduction of the off current as the defect moves to the edge. However, this defect has not shown a notable impact on the on current. The results have confirmed the possibility of controlling the electron transport of the DG-AGNRFET by defect engineering can be useful to extend the applications of graphene nanoribbon-based devices. The device has been simulated based on the self-consistent solution of a 3D Poisson-Schrödinger equation using non-equilibrium Green's function (NEGF) formalism.

Phosphorene nanoribbon field effect transistor with a dual material gate

“…A 1×1×16 Monkhorst-Pack k-point sampling is used and the density mesh cut-off is 150 Ry. Simulations are performed at a temperature of T = 300 K. The transmission coefficient T(E, k x ) is calculated by [16][17][18][19][20][21][22][23]:…”

Local Impact of Stone-Wales Defect on a Bilayer Graphene Nanoribbon FET

“…There are usually some unwanted defects arising during the fabrication process such as vacancies, edge-roughness and Stone-Wales (SW) defects. [24][25][26][27] The SW defect is one of the most observable defects in graphene systems. 28 An in-plane bond rotation causes a SW defect revealing two pentagons and two heptagons.…”