a b s t r a c tCalcium copper titanate, CaCu 3 Ti 4 O 12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO 2 /Si (1 0 0) substrates at 700 • C for 2 h. The peaks were indexed as cubic phase belonging to the Im−3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements.