A Bird's‐Beak‐Free Sealed‐Interface Local Oxidation Technology for Submicron Ultra‐Large‐Scale Integrated Circuits

Dwivedi, Vivek K.

doi:10.1149/1.2086991

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Optimization Of Sidewall Oxidation For Nanowire Fabrication1

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2016

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Cited by 5 publications

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“…As the etching time increases, this leads to an increase of undercut. The increase of undercut results in a shorter birds's beak length, due to the fact that larger undercut improves the sealing between the silicon/silicon nitride interfaces, making it difficult to lift-up the nitride layer [23].…”

Section: Optimization Of Sidewall Oxidation For Nanowire Fabricationmentioning

confidence: 99%

Reliable fabrication of sub-10 nm silicon nanowires by optical lithography

et al. 2016

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The reliable and controllable fabrication of silicon nanowires is achieved, using mature CMOS technology processes. This will enable a low-cost route to integrating novel nanostructures with CMOS logic. The challenge of process repeatability has been overcome by careful study of material properties for processes such as etching and oxidation. By controlling anisotropic wet etching conditions, selection of nitride mask layer properties and sidewall oxidation, a robust process was achieved to realize silicon nanowires with sub 10 nm features. Surface roughness of nanowires was improved by a suitable oxidation step. The influence of process conditions on the shape of the nanowire was studied using TCAD simulation.

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Section: Optimization Of Sidewall Oxidation For Nanowire Fabricationmentioning

confidence: 99%