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Nanoporous silicon nitride membranes fabricated from porous nanocrystalline silicon templates

“…The hydrogen present in the CHF 3 gas is known to increase the etch resistance of the silicon, while the carbon and uorine mixture succeeded in etching the nitride at nearly twice the rate. 26 The hydrogen present in the CHF 3 also protects the bulk silicon from being etched, providing an excellent etch stop. 5 sccm oxygen and 100 sccm argon were also included in the gas mixture to increase the anisotropy of the etch.…”

Low-stress silicon carbonitride for the machining of high-frequency nanomechanical resonators

“…A Trion Technology Phantom II RIE was used to anisotropically etch the Cr patterned SiCN in a 4:1 SF 6 :O 2 plasma recipe adapted from literature. 9 A 14 min bath in 10:1 buffered oxide etch ͑ammonium fluoride: hydrofluoric acid͒ released the beams and cantilevers, and a 45 min run in a Tousmis Autosamdri 815B critical process drier prevented stiction problems.…”

Silicon nitride etch characteristics in SF6/O2 and C3F6O/O2 plasmas and evaluation of their global warming effects

“…However, in the presence of rich O 2 at small Q(SF 6 ) values, such a polymer is dissociated to form volatile gases: CO and CO 2 . Moreover, the existence of O radicals plays a critical role in the etching of the Si 3 N 4 layer by F radicals, since it contributes to the generation of NO molecules or metastable NO from a surface chemical reaction [19]. The highest etch rate of 796 nm/ min was achieved at Q(C 3 F 6 O) = 50%, as shown in Fig.…”

“…In this work, we compared the etch characteristics of Si 3 N 4 layer in SF 6 and C 3 F 6 O plasmas and their impacts on global warming effects caused by etch by-products such as SO x F y , SO x , C x F y , CO x F y , CO x and N x O y [10]. Estimates of these greenhouse gases ventilated into the air can be expressed in units of MMTCEs associated with the GWP value, which is introduced to convert the greenhouse gases into carbon dioxide equivalent for each gas.…”