Low-stress silicon carbonitride for the machining of high-frequency nanomechanical resonators

Fischer, Lee MacKenzie; Wilding, N.; Gel, Murat; Evoy, Stéphane

doi:10.1116/1.2402153

Cited by 22 publications

(15 citation statements)

References 18 publications

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“…16,32 We have recently reported the development of a novel silicon carbonitride ͑SiCN͒ material of tunable mechanical properties for the fabrication of nanomechanical resonators. 15 The residual stress of this material can be controlled through postresidual anneal, allowing full access from compressive to tensile range. We here report the development of a fresh approach 7 to surface machining of suspended nanostructures that employs a combination of surface and bulk machining techniques.…”

Section: Introductionmentioning

confidence: 99%

“…Nanoresonators and microresonators are traditionally fabricated by surface micromachining [14][15][16][17][18][19] that involves deposition of a sacrificial oxide layer followed by the structural layer, such as polysilicon, silicon nitride, silicon carbide, nanocrystalline diamond, or metal films. Suspended structures ͑cantilevers, bridges, etc.͒ are released by isotropic etch of the buried sacrificial layer.…”

Section: Introductionmentioning

confidence: 99%

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Resonant characteristics of ultranarrow SiCN nanomechanical resonators

Guthy

Das

Drobot

et al. 2010

Journal of Applied Physics

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We report the machining of doubly-clamped SiCN nanomechanical resonators as narrow as 16 nm and lengths of up to 10 μm with a yield approaching 100%. The resonators were actuated using a piezoelectric disk, and their resonant response was detected using optical interferometry. Resonators with widths ranging from 16 to 375 nm and lengths from 10 to 50 μm were analyzed at room temperature at pressures ranging from 10 to 50 mTorr. Resonant frequencies in the 4–15 MHz range and quality factors in the 1000–7000 range were measured. We observed a significant decrease in resonant frequency with decreasing resonator width. The results of finite element analysis (FEA) show that this width dependence is mainly due to the resonators vibrating in the horizontal rather than vertical direction. At widths below 50 nm the comparison of experimental and FEA data suggest a gradual tensile stress reduction in the resonators as their width is reduced. Material softening is the most likely cause of this stress reduction. Additionally, the resonant behavior of 16, 55, and 375 nm wide devices was studied as a function of ambient pressure in the 10−5–10 Torr range. Resonance quality becomes dominated by gas damping effects at pressures above a threshold determined by the intrinsic Q-factor of the resonator. The intrinsic Q-factor tended to decrease with decreasing resonator width but was independent of length or resonant frequency. This suggests that surface-related mechanisms dominate the dissipation of energy in these devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Resonant characteristics of ultranarrow SiCN nanomechanical resonators

Guthy

Das

Drobot

et al. 2010

Journal of Applied Physics

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“…The resulting Cr metal pattern of a single resonator supported by two pads was used as a mask for the selective reactive ion etching of the SiCN layer using a 30 s 4:1 SF 6 :O 2 plasma recipe. 8 The Cr layer was etched away in a stock Cr etch solution composed of ceric ammonium nitrate, nitric acid, and water for 20 min. The doubly clamped resonators were finally released by an anisotropic wet etch in a 32% KOH solution saturated with isopropanol for etch durations ranging from 40 to 100 s.…”

Section: Methodsmentioning

confidence: 99%

“…7 Recently, Fischer et al reported the development and microstructural characterization of a novel silicon carbon nitride ͑SiCN͒ material for the fabrication of nanomechanical resonators. 8 The mechanical properties of SiCN can be tuned; e.g., the thin film stress of SiCN can be controlled through a postdeposition anneal, allowing full access from compressive to tensile range. Fischer et al further reported the development of a resonator nanomachining approach combining surface and bulk micromachining techniques with small undercuts and the potential for nanoscale resonators with a high yield.…”

Section: Introductionmentioning

confidence: 99%

Nanomachining and clamping point optimization of silicon carbon nitride resonators using low voltage electron beam lithography and cold development

Mohammad¹,

Guthy²,

Evoy³

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors report the nanomachining of sub-20-nm wide doubly clamped silicon carbon nitride resonators using low keV electron beam lithography with polymethyl methacrylate resist and cold development. Methodologies are developed for precisely controlling the resonator widths in the ultranarrow regime of 11–20 nm. Resonators with lengths of 1–20 μm and widths of 16–280 nm are characterized at room temperature in vacuum using piezoelectric actuation and optical interferometry. Clamping and surface losses are identified as the dominant energy loss mechanisms for a range of resonator widths. The resonator clamping points are optimized using an original electron beam lithography simulator. Various alternative clamping point designs are also modeled and fabricated in order to reduce the clamping losses.

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“…Experimental methods for making thin films of SiCN to facilitate sensor fabrication are being researched worldwide. Radio frequency magnetron sputtering [4,5], pulsed laser deposition [6], plasma-enhanced chemical vapor deposition (CVD) [7], microwave plasma-enhanced CVD and electron cyclotron resonance plasma CVD [8], ion beam sputtering [9], hotwire CVD [10] and other methods of depositing SiCN films have been explored. The advantages of catalytic CVD over PECVD and other deposition techniques include higher deposition rate with lower strain, reduced thermally induced stress on the substrate and low processing cost.…”

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confidence: 99%

Characterization of catalytic chemical vapor-deposited SiCN thin film coatings

2012

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Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using ammonia and hexamethyldisilazane gas sources using catalytic chemical vapor deposition process. Compositions of silicon, carbon and nitrogen in the SiCN films were varied by changing the flow rate of ammonia gas. The effect of deposition conditions on the structural, optical and mechanical properties of SiCN thin films was examined. X-ray photoelectron spectroscopy analysis indicated that the higher flow rate of ammonia gas results in higher nitrogen and lower carbon content in the deposited thin films. The measurement of stress as a function of substrate temperature in the SiCN film showed that the stress changes from compressive to tensile in the range of 275°C to 325°C. With these preliminary characterization tests, it is expected that SiCN nano-thin films can be used for developing sensors for harsh environment.

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Low-stress silicon carbonitride for the machining of high-frequency nanomechanical resonators

Cited by 22 publications

References 18 publications

Resonant characteristics of ultranarrow SiCN nanomechanical resonators

Resonant characteristics of ultranarrow SiCN nanomechanical resonators

Nanomachining and clamping point optimization of silicon carbon nitride resonators using low voltage electron beam lithography and cold development

Characterization of catalytic chemical vapor-deposited SiCN thin film coatings

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