A Bottom-Up Scalable Compact Model for Quantum Confined Nanosheet FETs

Ganeriwala, Mohit D.; Singh, Akanksha; Dubey, Abhilash; Kaur, Ramandeep; Mohapatra, Nihar R.

doi:10.1109/ted.2021.3130015

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A Bottom-Up Scalable Compact Model for Quantum Confined Nanosheet FETs

Cited by 5 publications

References 15 publications

Impact of Gate Length and Doping Variation on the DC and Analog/RF Performance of sub - 3nm Stacked Si Gate-All-Around Nanosheet FET

Impact of Gate Length and Doping Variation on the DC and Analog/RF Performance of sub - 3nm Stacked Si Gate-All-Around Nanosheet FET

Impacts of quantum confinement effect on threshold voltage and drain-induced barrier lowering effect of junctionless surrounding-gate nanosheet NMOSFET including source/drain depletion regions

A simplified approach to include confinement induced band structure changes into the NsFET compact model

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