A brief history of high-power semiconductor lasers

Welch, David

doi:10.1109/2944.902203

Cited by 95 publications

(42 citation statements)

References 33 publications

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“…Understanding the physical mechanisms driving the degradation is a step forward to the improvement of their power and lifetime [1][2][3]. The study of the defects induced in damaged lasers is essential to establish realistic degradation scenarios.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

Souto¹,

Pura²,

Jiménez³

2017

J. Phys. D: Appl. Phys.

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Section: Introductionmentioning

confidence: 99%

Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

Souto¹,

Pura²,

Jiménez³

2017

J. Phys. D: Appl. Phys.

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“…1,2 However, the maximum optical output power of semiconductor lasers is limited by the temperature rise in the laser active region ͑e.g., the so-called thermal rollover effect͒. [3][4][5] Depending on the thermal resistance of the semiconductor laser, the heat generation in the laser active region results in a temperature rise that reduces the carrier confinement and increases the nonradiative recombination processes.…”

Section: Introductionmentioning

confidence: 99%

Integrated electroplated heat spreaders for high power semiconductor lasers

Yang

Chen

et al. 2008

Journal of Applied Physics

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Thermal management of high power semiconductor lasers is challenging due to the low thermal conductivity of the laser substrate and the active device layers. In this work, we demonstrate the use of a microfabricated laser test device to study the thermal management of edge emitting semiconductor lasers. In this device, metallic heat spreaders of high thermal conductivity are directly electroplated on structures that mimic edge-emitting semiconductor lasers. The effects of various structural parameters of the heat spreader on the reduction of the thermal resistance of the laser test device are demonstrated both experimentally and theoretically. Without resolving to computational costive simulations, we developed two independent analytical models to verify the experimental data and further utilized them to identify the dominant thermal resistance under different laser mounting configurations. We believe our approach here of using microfabricated devices to mimic thermal characteristics of lasers as well as the developed analytical models for calculating the laser thermal resistance under different mounting configurations can potentially become valuable tools for thermal management of high power semiconductor lasers.

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“…From simple theory, it can be shown [24] that the rate of spontaneous emission for a given photon energy, may be written as (1) providing that is several larger than the energy separation between the two quasi-Fermi levels, . Here, is Boltzmann's constant and is a constant.…”

Section: Determining Facet Temperaturementioning

confidence: 99%

“…In order to produce gain in the important 1530-1560-nm telecommunications C-band, Raman amplifiers require semiconductor lasers emitting in the range 1430-1460 nm with fiber coupled powers 0.5 W [1]. Thus, for many applications, output powers of several hundred milliwatts are required frequently giving rise to power densities at the laser facets 1-10 MWcm .…”

mentioning

confidence: 99%

Direct measurement of facet temperature up to melting point and cod in high-power 980-nm semiconductor diode lasers

Sweeney

Lyons

Adams

et al. 2003

IEEE J. Select. Topics Quantum Electron.

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Abstract-The authors describe a straightforward experimental technique for measuring the facet temperature of a semiconductor laser under high-power operation by analyzing the laser emission itself. By applying this technique to 1-mm-long 980-nm lasers with 6-and 9-m-wide tapers, they measure a large increase in facet temperature under both continuous wave (CW) and pulsed operation. Under CW operation, the facet temperature increases from 25 C at low currents to over 140 C at 500 mA. From pulsed measurements they observe a sharper rise in facet temperature as a function of current ( 400 C at 500 mA) when compared with the CW measurements. This difference is caused by self-heating which limits the output power and hence facet temperature under CW operation. Under pulsed operation the maximum measured facet temperature was in excess of 1000 C for a current of 1000 mA. Above this current, both lasers underwent catastrophic optical damage (COD). These results show a striking increase in facet temperature under high-power operation consistent with the facet melting at COD. This is made possible by measuring the laser under pulsed operation.

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A brief history of high-power semiconductor lasers

Cited by 95 publications

References 33 publications

Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

Integrated electroplated heat spreaders for high power semiconductor lasers

Direct measurement of facet temperature up to melting point and cod in high-power 980-nm semiconductor diode lasers

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