Polycrystalline specimens of alumina (Al2O3), magnesium aluminate spinel (MgA1204), magnesia (MgO), silicon nitride (Si3N4) and silicon carbide (Sic) were irradiated with various ions at temperatures between 200 K and 450 K, and the microstructures were examined following irradiation using cross-section transmission electron microscopy. Amorphization was not observed in any of the irradiated oxide ceramics, despite damage energy densities up to -7 keV/atom (-70 displacements per atom). On the other hand, Sic readily amorphized after damage levels of -0.4 dpa at room temperature. Silicon nitride exhibited intemediate behavior; . irradiation with Fe* ions at room temperatm produced amorphization in the implanted ion region after damage levels of -1 dpa. However, irradiated regions outside of the implanted ion region did not amorphize even after damage levels in excess of 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneously irradiated with 1 MeV He+ ions at room temperature. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphizahon threshold dose of all five materials. Intense ionizing d a t i o n inhibits amorpkation in Si3N4, but does not appear to signtficantly influence the amorphimion behavior of Sic.