A brief review on photodetector performance based on zero dimensional and two dimensional materials and their hybrid structures

Light harvesting hexamolybdenum cluster integrated with the 3D ordered semiconductor inverse opals for optoelectronic property

“…σ=l/ (R.A) (1) where σ is the electrical conductivity, l is the thickness of the film, A is the area of the sample (1×1 cm 2 ), and R is the total resistance measured by Electrochemical Impedance Spectroscopy (EIS).…”

“…Considering the serious global warming problem, the discovery of a solar energyconverting material in the Vis-NIR domain for optoelectronic devices, such as photodetectors, light emission devices, sensors, and dye-sensitized solar cells, has occurred [1][2][3][4][5]. Among the nanoarchitecture nanomaterials, the [M6L i 8L a 6] ncluster unit, composed of a central Mo6 cluster, eight inner ligands at the face-capping position (L i = halogen or chalcogen; i for inner), and six apical ligands at the terminal positions ( L a = halogen, OH -, H2O, N3, OCOCnH2n+1, etc; a for apical.…”

Controllable-assembled functional monolayers by the Langmuir–Blodgett technique for optoelectronic applications

“…11D). 212,213 Self-assembly of most nanofilms of semiconductor materials at the gas-liquid interface can be achieved with the LB method. Fabrication of large-area, ordered, thickness-tunable nanowire materials at the gas-liquid interface with low environmental requirements for preparation, makes the LB method suitable for application in the field of photoelectric detection.…”

Photogating interfacial effects in carbon nanotube-based transistors on a Si/SiO2 substrate toward highly sensitive photodetection

“…Photogating-based sensors are being used to create highly responsive photodetectors with nanomaterials for different wavelength ranges and various applications, and can be prepared by rapid and standard techniques. [26][27][28][29][30][31][32] The photogating process in field-effect transistors (FETs) on a silica/silicon substrate has been studied deeply. [19][20][21][22][23][24][25] The electric field induced by the surface potential φ s on the silica/ silicon interface separates photoexcited holes and electrons, thereby trapping one type of charge carrier in the potential well at the interface (Fig.…”

“…Photogating-based sensors are being used to create highly responsive photodetectors with nanomaterials for different wavelength ranges and various applications, and can be prepared by rapid and standard techniques. 26–32…”