A Broadband High-Efficiency Continuous Class-AB Power Amplifier for Millimeter-Wave 5G and SATCOM Phased-Array Transmitters

Boroujeni, Soroush Rasti; Basaligheh, Ali; Ituah, Stanley; Nezhad-Ahmadi, Mohammad-Reza; Safavi‐Naeini, Safieddin

doi:10.1109/tmtt.2020.2983703

Cited by 22 publications

(9 citation statements)

References 35 publications

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“…In 5G communication, the complex modulated signal has a high requirement on the linearity and bandwidth of the system. So, amplifiers with high linearity and wide bandwidth [1,2,3,4,5,6] are strongly needed to meet the high-quality communication with low linear distortion.…”

Section: Introductionmentioning

confidence: 99%

A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

Sun

et al. 2022

IEICE Electron. Express

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This paper presents a compact 24-32 GHz high-linearity broadband, fully integrated amplifier which is designed in 130-nm SiGe (BiCMOS). The principle of improving the linearity of degeneration inductor and the effect of the driving stage on linearity are analyzed. To achieve flat broadband, the transformer is also used in the interstage matching. Output matching for low insertion loss networks has been selected carefully. The amplifier demonstrates a small signal gain of 11.3 dB range from 24GHz to 32GHz with a gain flatness of ±0.5dB. Measurements show a maximum power added efficiency (PAE) of 18.54% with output 1dB compression power for 7.6 dBm at 32GHz.

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Section: Introductionmentioning

confidence: 99%

A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

Sun

et al. 2022

IEICE Electron. Express

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“…Today, to address the increasing demands of modern wireless communication terminals, it is necessary to cover different standards with a single piece of hardware, and thus, a multi-band transmitter is a key technical challenge [1][2][3][4][5]. To achieve dual-band or multi-band operation with one highly efficient power amplifier (PA) circuit, the design does not only need the correct fundamental loads transformation, but also the proper higher harmonic impedance terminations [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…A common approach to address this problem is to design a broadband PA that covers all the operation bands [7][8][9][10][11]. The fundamental impedance matching with 50-Ohm load is the first step to overcome.…”

Section: Introductionmentioning

confidence: 99%

A Class-F Based Power Amplifier with Optimized Efficiency in Triple-Band

Yang

Zhang

et al. 2022

Electronics

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A Class-F mode-based power amplifier (PA) with optimized efficiency in triple-band was designed using a simple and systematic approach. By considering the second and third harmonic terminations of the PA, the relationship between the output impedance design space and the drain efficiency (DE) is extracted by large-signal model simulation. Then, a low-pass matching topology is utilized for the triple-band efficiency optimization. The method is justified by both simulation and measurement of a triple-band PA to integrate three functions into one hardware, i.e., 1518–1525 MHz for mobile communication, 2.1 GHz for telemetry and control, and 2.492 GHz for navigation signal transport. The proposed PA achieves a measured result of high DE (63% at 1.52 GHz, 71% at 2.1 GHz, 59% at 2.492 GHz) in the three bands with an output power of at least 40 dBm.

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“…Power amplifiers (PAs) are commonly used in a variety of applications such as radar applications [1]- [6], imaging systems [7]- [9], wireless/mobile communications [10]- [13], satellite communications [14]- [17], positioning systems [18]- [21], etc. Some of these application systems have to be used in outdoor environments, for instance, the base stations of mobile communications [22]- [24], weather radar stations, etc., even under hazardous/extreme environments as well as fluctuating temperature and humidity [25].…”

Section: Introductionmentioning

confidence: 99%

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Zhou

Jha

2021

IEEE Access

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As the technology scales down, besides the CAD tools and design guidelines, understanding circuit performance degradation as a consequence of transistor degradation becomes essential for designers. Due to several adverse environmental conditions, the study of performance degradation in the power amplifier (PA) is very demanding research. In this paper, an RF PA is experimentally studied to observe various characteristic degradations in a broad range of operating temperature and humidity conditions. Based on a few key measurement points, a measurement-based modeling method is proposed to help designers make intelligent decisions to minimize the performance degradation effects. This method uses four two-dimensional interpolation models, and the results show that the prediction results of the four planar interpolation models are in good agreement with the measurement results. The results presented in this article help select design models for the RF power amplifier that can analyze the performance degradation of the transistor parameters in advance. Cubic and spline interpolation has the highest model accuracy among the four two-dimensional models, while the nearest interpolation offers the shortest training time.

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A Broadband High-Efficiency Continuous Class-AB Power Amplifier for Millimeter-Wave 5G and SATCOM Phased-Array Transmitters

Cited by 22 publications

References 35 publications

A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

A Class-F Based Power Amplifier with Optimized Efficiency in Triple-Band

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

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