Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Abstract

As the technology scales down, besides the CAD tools and design guidelines, understanding circuit performance degradation as a consequence of transistor degradation becomes essential for designers. Due to several adverse environmental conditions, the study of performance degradation in the power amplifier (PA) is very demanding research. In this paper, an RF PA is experimentally studied to observe various characteristic degradations in a broad range of operating temperature and humidity conditions. Based on a few key measurement points, a measurement-based modeling method is proposed to help designers make intelligent decisions to minimize the performance degradation effects. This method uses four two-dimensional interpolation models, and the results show that the prediction results of the four planar interpolation models are in good agreement with the measurement results. The results presented in this article help select design models for the RF power amplifier that can analyze the performance degradation of the transistor parameters in advance. Cubic and spline interpolation has the highest model accuracy among the four two-dimensional models, while the nearest interpolation offers the shortest training time.

Design of dual-band power amplifier using bandstop filter and dual-mode bias circuit for multistandard transceiver systems

“…However, in the middle band, only the efficiency decreases. These drawbacks can be observed in previous works [3][4][5][6][7][8][9][10][11][12][13][14][15][16] where the output power and power gain are not isolated in the middle band. Isolation within the middle band is crucial for efficiency and linearity.…”

“…Multiband systems have gained popularity in recent years due to their compact size, low cost, and ease of implementation. Several dual-band PAs with different structures have been reported [3][4][5][6][7][8][9][10][11][12][13][14][15][16] . Challenges in dual-band PAs include efficiency, output power, gain, and cost, with the most significant challenge being the similarity of characteristics between the two bands.…”

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

“…Therefore, it is feasible to use ANN to investigate the temperature behavior of PA. On the basis of this idea, the deep neural network (DNN), BPNN and extreme learning machine (ELM) were chosen for the first time to predict the temperature behavior of a complementary metal oxide semiconductor (CMOS) PA by 236 groups of measurement samples in 2018 20 . Subsequently, the four two‐dimensional interpolation models based on a few key measurement points were applied to analysis the performance difference of a gallium nitride (GaN) class‐AB PA when temperature changed 21 . In 2022, the support vector machine (SVM) was first utilized to model the temperature behavior of a CMOS class‐A PA according to measurement data and the difference in the number of training data was discussed 22 .…”

“…Different from other works in References 17, 20–23, a GaAs pHEMT PA is selected as the experiment object, which makes circuit more susceptible to temperature changes due to the low thermal conductivity. It is more urgent to model the temperature behavior of this PA.…”

Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

“…Microwave power amplifiers are key devices that utilize AlGaN/GaN high-electron-mobility transistors (HEMTs) [1][2][3][4][5][6][7][8][9][10][11][12][13]. Amplifier distortion becomes critical because wideband and multivalue linear modulation is used to achieve high speed and large capacity in modern wireless communication.…”