A broadband hybrid GaN cascode low noise amplifier for WiMax applications

Jarndal, Anwar; Bassal, Amer M.

doi:10.1002/mmce.21456

Cited by 18 publications

(18 citation statements)

References 28 publications

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“…Therefore, the fraction (V GS − V th (T)) 2 in Equation (1) increases when temperature increases, while β(T) decreases. As a result, the drain current variation in the MOSFET transistor, in relation to temperature, is determined by the dominance of each of these two parts.…”

Section: Temperature Compensationmentioning

confidence: 99%

“…HEMT usually works with high breakdown voltage and is utilized for bandwidth applications. 1,2 LNAs designed with this technology generally have a high power consumption and are therefore not suitable to low power applications such as IoT and medical applications. Another technology used in field effect transistor (FET) semiconductors is the carbon nanotube FET (CNFET) technology.…”

Section: Introductionmentioning

confidence: 99%

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PVT ‐compensated low‐voltage and low‐power CMOS LNA for IoT applications

Nejadhasan

Zaheri

Abiri

et al. 2020

Int J RF Microw Comput Aided Eng

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In this paper, a low-noise amplifier (LNA) with process, voltage, and temperature (PVT) compensation for low power dissipation applications is designed. When supply voltage and LNA bias are close to the subthreshold, voltage has significant impact on power reduction. At this voltage level, the gain is reduced and various circuit parameters become highly sensitive to PVT variations. In the proposed LNA circuit, in order to enhance efficiency at low supply voltage, the cascade technique with g m boosting is used. To improve circuit performance when in the subthreshold area, the forward body bias technique is used. Also, a new PVT compensator is suggested to reduce sensitivity of different circuit's parameters to PVT changes. The suggested PVT compensator employs a current reference circuit with constant output regarding temperature and voltage variations. This circuit produces a constant current by subtracting two proportional to absolute temperature currents. At a supply voltage of 0.35 V, the total power consumption is 585 μW. In different process corners, in the proposed LNA with PVT compensator, gain and noise figure (NF) variations are reduced 10.3 and 4.6 times, respectively, compared to a conventional LNA with constant bias. With a 20% deviation in the supply voltage, the gain and noise NF variations decrease 6.5 and 34 times, respectively.

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Section: Temperature Compensationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

PVT ‐compensated low‐voltage and low‐power CMOS LNA for IoT applications

Nejadhasan

Zaheri

Abiri

et al. 2020

Int J RF Microw Comput Aided Eng

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“…The determination of the N ‐parameters is performed by means of the ATS Maury software based on the source‐pull procedure, which consists of measuring the noise factor ( F ) (or noise figure [ NF ] when expressed in dB) for at least four source impedances synthesized by the tuner. This procedure is based on the fact that F can be defined as a function of the source reflection coefficient ( Γ S ) by using the four noise parameters:

normalF = F_{\min} + 4 \frac{R_{normaln}}{Z_{0}} \frac{{(||, Γ_{s} ‐ Γ_{opt})}^{2}}{{|1 + {normalΓ}_{opt}|}^{2} ((), 1 - {|Γ_{s}|}^{2})}

…”

Section: Devices Under Test and Experimental Setupmentioning

confidence: 99%

Equivalent‐circuit–based modeling of the scattering and noise parameters for multi‐finger GaAs pHEMTs

Caddemi

Cardillo

Crupi

2019

Int J Numerical Modelling

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This study is focused on the experimental characterization of the highfrequency linear behavior of interdigitated gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistors (pHEMTs) in terms of scattering and noise parameters. A measurement-based model is developed by using the equivalent-circuit representation. The values of the extrinsic bias-independent elements are obtained by means of the "cold" approach and then subtracted from the scattering parameter measurements at the bias point of interest, thereby enabling calculation of the intrinsic bias-dependent elements. Next, the extracted small-signal equivalent circuit is expanded by assigning an equivalent noise temperature to each resistor, thus obtaining the noise model.The validity of the extracted equivalent-based model is fully confirmed by the good agreement between measurements and model simulations over a broad frequency range for devices having different number of gate fingers. In addition, the scaling of the achieved performance versus the total gate width is analyzed and discussed. FIGURE 1 Photo of the studied GaAs pHEMTs with different gate width: A, 2 × 50 μm; B, 4 × 50 μm; C, 6 × 50 μm; and D, 8 × 50 μm 2 of 7 CADDEMI ET AL. 2 of 7 CADDEMI ET AL. FIGURE 5 Measured (red lines) and simulated (blue lines) S-parameters from 0.1 to 50 GHz at V DS = 2 V and I D = 200 mA/mm for two GaAs pHEMTs with different gate width: (A, B) 2 × 50 μm and (C, D) 8 × 50 μm. The maximum radius for the two polar plots is 15 FIGURE 4 Measured S-parameters from 0.1 to 50 GHz at V DS = 2 V and I D = 200 mA/mm for four GaAs pHEMTs with different gate width: (blue lines) 2 × 50 μm, (red lines) 4 × 50 μm, (green lines) 6 × 50 μm, and (purple lines) 8 × 50 μm. The maximum radius for the polar plot is 15 4 of 7 CADDEMI ET AL. 4 of 7 CADDEMI ET AL.

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“…Technological progress has become an obsession of universities and industrial companies, resulting in the development of a large number of broadband low-noise amplifier architectures [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

High Gain Cascaded GaAs-pHEMT Broadband Planar Low Noise Amplifier for WiMAX-802.16b Applications

Bakkali

Touhami

Elhamadi

2021

Lecture Notes in Electrical Engineering

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Low noise amplifiers are essential structures in telecommunications systems. The problem of LNAs in planar technology is the difficulty of having a flat gain with a low noise figure in a wide bandwidth. In this work, we focus on the design of a broadband low noise amplifier for WiMAX-802.16d applications using GaAs-pHEMT ATF-35176 of Avago technologies. The three-stage cascade configuration mounted on an FR-4 substrate is used and provides a high gain, with an average value of 34.3 dB and a low noise figure of 0.95 ± 0.1 dB with a power consumption of 417 mW. The total die size is 9.5 × 2 cm 2 .

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A broadband hybrid GaN cascode low noise amplifier for WiMax applications

Cited by 18 publications

References 28 publications

PVT ‐compensated low‐voltage and low‐power CMOS LNA for IoT applications

PVT ‐compensated low‐voltage and low‐power CMOS LNA for IoT applications

Equivalent‐circuit–based modeling of the scattering and noise parameters for multi‐finger GaAs pHEMTs

High Gain Cascaded GaAs-pHEMT Broadband Planar Low Noise Amplifier for WiMAX-802.16b Applications

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