A Broadband Multistage LNA With Bandwidth and Linearity Enhancement

Nikandish, Gholamreza; Yousefi, Alireza; Kalantari, Milad

doi:10.1109/lmwc.2016.2605446

Cited by 73 publications

(17 citation statements)

References 9 publications

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“…This technique makes it possible to optimize the gate-width of the firststage transistor to improve the noise performance. The gate voltages of M 2 -M 3 are set to be −0.4 V, while that of M 1 is modified from −0.4 V to −0.35 V to increase the gain of this stage and reduce the noise contribution of subsequent stages in overall NF [16]. For multi-stage amplifiers, shunt feedback is usually adopted to enhance the bandwidth and the gain flatness by decreasing low-frequency gain response [17]- [20].…”

Section: B Design Of the Lna And Equalizer Networkmentioning

confidence: 99%

Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier

Yang

Rong

et al. 2019

IEEE Access

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In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-µm-pHEMT technology. To improve the small-signal performance and the power-handling capability of the limiter-LNA, the improvement of the PIN-limiter circuit structure and the survivability of the LNA network are proposed. In addition, the total chip area is 2.5 mm × 1.2 mm with an equalizer integrated on chip behind the limiter-LNA to improve the bandwidth with a minimum impact on overall NF. The measurements show that the proposed limiter-LNA with only two-stage limiter structure tolerates up to 38 dBm continuous wave (CW) input power without failure, and the average gain and the noise figure for the limiter-LNA are 17 dB and 2.2-2.6 dB, respectively, on the 30-38 GHz frequency bandwidth. INDEX TERMS GaAs pHEMT, integrated limiter low noise amplifier (LNA), MMIC, noise figure (NF), PIN diode.

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Section: B Design Of the Lna And Equalizer Networkmentioning

confidence: 99%

Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier

Yang

Rong

et al. 2019

IEEE Access

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“…Due to the high breakdown electric field of GaN technology, an obviously high P 1dB can be achieved compared with GaAs technology, as shown in Figure . The comparison is given in Table , the P 1dB of InP technology is lower than the GaAs, so InP is not referred in this table.…”

Section: Mmic Characterizationmentioning

confidence: 99%

18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

Tong

Zhang

et al. 2018

Int J RF Microw Comput Aided Eng

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GaN technology has attracted main attention towards its application to high‐power amplifier. Most recently, noise performance of GaN device has also won acceptance. Compared with GaAs low noise amplifier (LNA), GaN LNA has a unique superiority on power handling. In this work, we report a wideband Silicon‐substrate GaN MMIC LNA operating in 18‐31 GHz frequency range using a commercial 0.1 μm T‐Gate high electron mobility transistor process (OMMIC D01GH). The GaN MMIC LNA has an average noise figure of 1.43 dB over the band and a minimum value of 1.27 dB at 23.2 GHz, which can compete with GaAs and InP MMIC LNA. The small‐signal gain is between 22 and 25 dB across the band, the input and output return losses of the MMIC are less than −10 dB. The P1dB and OIP3 are at 17 dBm and 28 dBm level. The four‐stage MMIC is 2.3 × 1.0 mm2 in area and consumes 280 mW DC power. Compared with GaAs and InP LNA, the GaN MMIC LNA in this work exhibits a comparative noise figure with higher linearity and power handling ability.

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“…Advancements in wireless communication technology have prompted the demand for multi-octave broadband amplifiers for application in high data rate transmission, ultrawideband (UWB) systems, high-resolution radars, and instrumentations where a broadband LNA is a crucial component [1,2,3,4]. For designing UWB amplifiers, Darlington configurations [5,6,7], feedback techniques [8,9,10,11,12,13], inductive-peaking techniques [14,15,16,17], and distributed amplifiers (DAs) [18,19,20,21,22,23,24] are the most popular approaches.…”

Section: Introductionmentioning

confidence: 99%

A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique

Yang

Rong

et al. 2019

IEICE Electron. Express

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This letter presents the design and fabrication of a five-octave broadband low noise amplifier (LNA) using 0.1-µm GaAs pseudomorphic high-electron mobility transistor (pHEMT) technology. The multi-peaking bandwidth enhancement and noise reduction technique is proposed for a cascode topology to significantly improve the performance of the LNA. The fabricated LNA achieves a −3 dB bandwidth of 1-32 GHz with an average gain of 12.2 dB, an excellent noise figure (NF) of 1.9-2.6 dB, and an output-referred 1 dB compression point (OP 1dB) of 10.2-12.7 dBm with good input/output matching over the entire bandwidth. To the best of the authors' knowledge, these results demonstrate the lowest room-temperature NF ever reported for fully integrated MMIC amplifiers with a bandwidth of 1 to more than 30 GHz.

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A Broadband Multistage LNA With Bandwidth and Linearity Enhancement

Cited by 73 publications

References 9 publications

Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier

Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier

18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique

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