A Broadband PVT-Insensitive All-nMOS Noise-Canceling Balun-LNA for Subgigahertz Wireless Communication Applications

Kim, Dongmin; Jang, Seunghyeok; Lee, Junghyup; Im, Donggu

doi:10.1109/lmwc.2020.3042233

Cited by 17 publications

(3 citation statements)

References 12 publications

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“…Even though [13] provides high gain and slightly better NF, its linearity is worse, while consuming more power and occupying 2× the area. Moreover, [19] consumes lower dc power; however its NF, gain and bandwidth performance are worse, and it needs a higher 1.2 V supply, while requiring an additional buffer to drive the external 50 load. Finally, [22] consumes less dc power and provides a bit higher gain; however its NF and linearity performance are worse even at a higher 1.2 V supply, and it requires an extra buffer to drive the external 50 load.…”

Section: Measurement Resultsmentioning

confidence: 99%

A 20 MHz–2 GHz Inductorless Two-Fold Noise-Canceling Low-Noise Amplifier in 28-nm CMOS

Bozorg

Staszewski

2022

IEEE Trans. Circuits Syst. I

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In this paper, a wideband low-noise amplifier (LNA) with a two-fold noise cancellation scheme is proposed. Finetuned for advanced CMOS, the proposed LNA architecture uses a common-gate input branch to provide wideband input matching. It is followed by two stages of the common-source structure which cancels the noise and distortion of the first and second stages and relaxes the design restriction on the first noise-cancellation stage. The provided circuit-level analysis is verified by simulations. The proposed LNA is fabricated in 28-nm CMOS. It achieves a minimum noise figure (NF) of 2.5 dB and input return loss (S 11 ) < −15 dB over 0.02-2 GHz bandwidth while consuming only 4.1 mW from a 1 V supply and driving an external 50-load. The −3 dB power gain (S 21 ) is 18.5 dB and IIP3 is +4.25 dBm.

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Section: Measurement Resultsmentioning

confidence: 99%

A 20 MHz–2 GHz Inductorless Two-Fold Noise-Canceling Low-Noise Amplifier in 28-nm CMOS

Bozorg

Staszewski

2022

IEEE Trans. Circuits Syst. I

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“…Regarding the chip size, it is worth noting that the level of integration is different for each design. Some references utilized off-chip inductors, capacitors, or bias tees for injecting RF signals or biasing the circuit TCAS I 2020 [12] TCAS II 2021 [15] TMTT 2017 [19] TCAS I 2019 [20] TMTT 2012 [21] This work [9], [12], [13], [14]. These components, however, are difficult to be integrated on-chip in general due to large areas or poor performance, so they are often placed on circuit boards.…”

Section: Discussionmentioning

confidence: 99%

A Single-Ended-to-Differential Low-Noise Amplifier With Transformer-Based Feedback Network for 3–5 GHz UWB Applications

Song,

Kim,

Jung

et al. 2024

IEEE Access

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A wideband single-ended-to-differential (S-to-D) low-noise amplifier (LNA) for ultrawideband (UWB) wireless sensor and internet-of-things applications is presented. In order to simultaneously provide wideband input matching characteristics, low-noise performance, and flat in-band gain response, a common-source input stage with on-chip transformer-based reactive feedback network is proposed. With the use of an on-chip transformer that serves as a shunt peaking inductor in differential mode, the LNA achieves improved voltage gain at high frequencies. At the input port, a cross-coupled common-gate stage balances the currents in differential operation, minimizing the gain and the phase mismatches at the differential output node. The proposed S-to-D LNA fabricated in a commercial 180 nm bulk CMOS technology exhibits a peak gain of 10.5 dB, an in-band minimum noise figure of 3.6 dB, and an input return loss of better than 8.8 dB from 3.0 GHz to 5.0 GHz, and a power consumption of 5.5 mA from a 1.8 V dc supply. The measured amplitude and phase mismatches are within 0.2 dB and 2.3 degrees, respectively. In comparison with other state-of-the-art designs, the proposed S-to-D LNA achieves low amplitude and phase mismatches, demonstrating well-balanced performance for 3-5 GHz UWB applications.INDEX TERMS Balun, CMOS, cross-coupled common-source, low-noise amplifier (LNA), radiofrequency circuit, single-to-differential, transformer-based feedback network, ultrawideband (UWB)

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“…Previous studies on CG-CS topology [3][4][5][6][7][8][9][10][11][12] show that a balanced condition between the CG and CS stages is essential for the noise canceling condition. Furthermore, scaling between the transconductance of the CS stage (gm CS ) and the transconductance of the CG stage (gm CG ) also affects the NF performance [3].…”

Section: Introductionmentioning

confidence: 99%

A Wideband Low-Power Balun-LNA with Feedback and Current Reuse Technique

2022

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This paper presents a low-noise amplifier (LNA) with single to differential conversion (Balun) for multi-standard radio applications. The proposed LNA combines a common-gate (CG) stage for wideband input matching and a common-source (CS) stage to cancel the noise and distortion of the CG stage. Using the proposed technique, a low noise figure (NF) is achieved while providing a wideband of operation. Furthermore, a feedback connection from the CS stage to the gate of the CG is employed to boost the transconductance of the CG stage (gmCG), and an additional complementary transistor is applied at the CS stage using current reuse to increase the overall transconductance of the CS stage (gmCS) without increasing the power consumed by the stage. This LNA was designed using TSMC 65 nm technology, and post-layout simulation results show operation across 0.5–5 GHz, a maximum power gain of 20 dB, 4 dB minimum NF, and third-order intercept point (IIP3) of −10 dBm while consuming only 5 mW of power from a 1.2 V supply.

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A Broadband PVT-Insensitive All-nMOS Noise-Canceling Balun-LNA for Subgigahertz Wireless Communication Applications

Cited by 17 publications

References 12 publications

A 20 MHz–2 GHz Inductorless Two-Fold Noise-Canceling Low-Noise Amplifier in 28-nm CMOS

A 20 MHz–2 GHz Inductorless Two-Fold Noise-Canceling Low-Noise Amplifier in 28-nm CMOS

A Single-Ended-to-Differential Low-Noise Amplifier With Transformer-Based Feedback Network for 3–5 GHz UWB Applications

A Wideband Low-Power Balun-LNA with Feedback and Current Reuse Technique

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