A C-band high-dynamic range GaN HEMT low-noise amplifier

Xu, Hongtao; Sanabria, C.; Chini, Alessandro; Keller, S.; Mishra, Umesh K.; York, R.A.

doi:10.1109/lmwc.2004.828020

Cited by 68 publications

(5 citation statements)

References 6 publications

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“…The graphene LNA demonstrated here is fabricated on flexible substrates, with operation frequencies in the gigahertz regime. It should be emphasized that our 200 nm graphene LNA outperforms LNAs based on III–V HEMTs, and that based on typical 180 nm CMOS technology. , At the bias point and optimal impedances obtained above, the noise figure and associated gain were measured as a function of frequency, as shown in Figure c. The LNA presents a narrow-band characteristic with a peak gain and a minimum noise figure at the frequency around 5.5 GHz, which is consistent with the results shown in Figure b.…”

Section: Resultssupporting

confidence: 86%

“…Figure 6b shows a concise 2D minimum noise figure contour plot of the graphene-based LNA at a fixed frequency of 5.5 GHz when applying different values of V TG and V DS . With the G-FET biased at V DS = 0.6 V and V TG = 0.05 V, we can obtain a decent NF min of only 1.34 dB and an 23 and that based on typical 180 nm CMOS technology. 24,25 At the bias point and optimal impedances obtained above, the noise figure and associated gain were measured as a function of frequency, as shown in Figure 6c.…”

Section: Resultsmentioning

confidence: 91%

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Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits

et al. 2014

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Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz microwave integrated circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 91%

Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits

et al. 2014

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“…Experimental works on GaN HEMTs reporting maximum output power density of 12 W/mm at 10 GHz [2] and maximum cut-off frequency (f T ) of 121 GHz [3] have been published. Recently, GaN based circuits such as power amplifiers [4], low-noise amplifiers [5] and oscillators [6] have been reported. A physics-based model that can correlate device parameters and operating conditions will be highly beneficial for the prediction of circuit performances.…”

Section: Introductionmentioning

confidence: 99%

A physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTs

Sippel

Islam

Mukherjee

2007

Int J RF and Microwave Comp Aid Eng

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A physics-based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large-and small-signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the heterointerface and finite effective width of the 2DEG gas have been incorporated in the analysis. The model predicts a maximum drain current of 523 mA/mm and transconductance of 138 mS/mm for a 1 mm 3 75 lm device, which are in agreement with the experimental data.

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“…III-V-based transistors, such as AlGaAs/GaAs and AlGaN/GaN high-electron-mobility transistors (HEMTs), are also used in high-frequency PAs and LNAs, but GaAs-based HEMTs suffer from low (HEMTs), are also used in high-frequency PAs and LNAs, but GaAs-based HEMTs suffer from low voltage operation, low power per unit, and low power efficiency due to the small energy bandgap and low breakdown voltage [9][10][11]. On the other hand, GaN-based HEMTs have demonstrated stronger frequency response, higher power-added efficiency (PAE), and better power performance, so are suitable for 5G and B5G systems, ranging from sub-6 GHz to Ka band, due to the high breakdown voltage, high saturation current, and low-frequency noise characteristics [12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Lee,

Chuang,

Gamiz

et al. 2023

Micromachines

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In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported. The fabricated AlGaN/GaN HEMTs with OEP structures were used to reduce the source and drain resistances (Rs and Rd) for RF performance improvements. Within the proposed study using 1 μm hole, 3 μm hole, 1 μm line, and 3 μm line OEP HEMTs with 2 × 25 μm gate widths, the small signal performance, large signal performance, and minimum noise figure (NFmin) with optimized values were measured for 1 μm line OEP HEMTs. The cut-off frequency (fT) and maximum oscillation frequency (fmax) value of the 1 μm line OEP device exhibited optimized values of 36.4 GHz and 158.29 GHz, respectively. The load–pull results show that the 1 μm line OEP HEMTs exhibited an optimized maximum output power density (Pout, max) of 1.94 W/mm at 28 GHz. The 1 μm line OEP HEMTs also exhibited an optimized NFmin of 1.75 dB at 28 GHz. The increase in the contact area between the ohmic metal and the AlGaN barrier layer was used to reduce the contact resistance of the OEP HEMTs, and the results show that the 1 μm line OEP HEMT could be fabricated, producing the best improvement in RF performance for Ka-band applications.

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A C-band high-dynamic range GaN HEMT low-noise amplifier

Cited by 68 publications

References 6 publications

Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits

Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits

A physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTs

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

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