A Capacitance-Based Methodology for Work Function Extraction of Metals on High-&amp;lt;tex&amp;gt;$kappa$&amp;lt;/tex&amp;gt;

Jha, Rashmi; Gurganos, J.; Kim, Y.H.; Choi, Rino; Lee, J.; Misra, Veena

doi:10.1109/led.2004.829032

Cited by 118 publications

(77 citation statements)

References 4 publications

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“…Effective work functions from CV measurements were extracted from the metal oxide semiconductor capacitors (MOSCAPs) by graphing the V fb versus EOT on wafers with different thickness of pre-grown SiO 2 before the deposition of an HfO 2 layer. This "wedding cake" methodology has been used to extract work functions of new materials and is described in detail elsewhere [13]. MOSCAPs were also made without the underlying cake oxide.…”

Section: Methodsmentioning

confidence: 99%

Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate

et al. 2009

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Section: Methodsmentioning

confidence: 99%

Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate

et al. 2009

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“…11,17 It is highly probable that sample charging induces a significant part of this band bending, as such extreme downward band bending in n-FET gate stacks with HfO 2 / SiO 2 dielectrics has not been observed with C-V measurements. 66,67 A subsequent question is why does irradiation induced charging result in greater downward Si band bending in UPS than in XPS? This may be due to the longer electron attenuation lengths in XPS, which would result in more gradual hole density gradients across the near surface ͑top ϳ50 Å͒ regions compared to UPS.…”

Section: -9mentioning

confidence: 99%

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

Bersch

Consiglio³

et al. 2010

Journal of Applied Physics

123

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The HfO2–Si valence and conduction band offsets (VBO and CBO, respectively) of technologically relevant HfO2/SiO2/Si film stacks have been measured by several methods, with several groups reporting values within a range of ∼1 eV for both quantities. In this study we have used a combination of x-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry to measure the HfO2–Si VBO and CBO of both as-deposited and annealed stacks. Unlike previous XPS based measurements of the HfO2–Si VBO, we have corrected for the effect of charging in the XPS measurement. We find that after correction for charging, the HfO2–Si VBOs are decreased from their typical XPS-measured values, and agree better with values measured by UV photoemission spectroscopy and internal photoemission. We also report values for the rarely reported HfO2–SiO2 and SiO2–Si VBOs and CBOs in HfO2/SiO2/Si stacks. In addition to the band offsets, XPS was used to measure the band bending in the Si substrate of HfO2/SiO2/Si film stacks. Unannealed HfO2 stacks showed downward Si band bending of 0.4–0.5 eV, while annealed HfO2 stacks showed negligible band bending. Finally, we investigated the composition of the SiO2 layer in SiO2/Si and HfO2/SiO2/Si. By decomposing the Si 2p spectra into the spin orbit partner lines of its five oxidation states we observed that the growth of the HfO2 films resulted in the growth of the SiO2 underlayer and an increase by a factor of ∼2.3 in the density of suboxide species of SiO2. Based on the relatively high binding energy of the Si 2p4+ level with respect to the Si 2p0 level and a survey of results from literature, we conclude that the SiO2 layer in the HfO2/SiO2/Si samples we measured does not undergo significant intermixing with HfO2.

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“…2(c). 1,3 The A-B stacked graphite is known to have a work function of 4.6 eV, and the work function of thin graphene layer grown on SiC approaches this value as the number of layers increases. 4 The work function of graphene in our result is, however, found to be almost independent of the number of layers, as plotted in Fig.…”

mentioning

confidence: 99%