Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate

Reid, K.; Dip, A.; Sasaki, Sadao; Triyoso, Dina H.; Samavedam, S.; Gilmer, D. C.; Gondran, Carolyn F. H.

doi:10.1016/j.tsf.2008.10.032

Cited by 9 publications

(5 citation statements)

References 14 publications

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“…Previous studies of the as-grown HfO 2 /SiO x and HfSiO x /SiO x dielectric stacks used in this work showed that they exhibit D it in the order of 10 12 cm -2 (2,5,6). Although this value is quite high, it is consistent with the values reported in the literature from other groups on as-grown high-k dielectric films (7,8). However, it has been found that using a forming gas anneal at the end of the fabrication process, the value of D it can be reduced to as low as ~10 10 cm -2 (2,5,6,(9)(10)(11).…”

Section: Introductionsupporting

confidence: 91%

Comparison oF Electrical Measurements with Structural Analysis oF Thin High-k Hafnium-based Films

et al. 2009

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We present a detailed characterization of thin high-k Hf-based dielectric/SiO 2 stacks on Si by electrical measurements (capacitance -voltage (C-V) and current-voltage (I-V)), structural analysis using transmission electron microscopy (TEM) and compositional analysis using medium energy ion scattering (MEIS). We show that the electrical results are consistent with and can be explained by the structural and compositional results. Specifically, the structural results show that the effect of nitridation of the films using a decoupled plasma nitridation method is an increase in SiO 2 thickness, which results in a capacitance and leakage current decrease, revealed by the electrical measurements. Nitridation also reduces the density of interface traps for these samples. The reduction is more effective in the case of nonstoichiometric hafnium silicate films (HfSiOx) than in the case of HfO 2 .

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Section: Introductionsupporting

confidence: 91%

Comparison oF Electrical Measurements with Structural Analysis oF Thin High-k Hafnium-based Films

et al. 2009

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“…The thin lms with 800 C and 1000 C annealing exhibit prevalence of a polycrystalline hexagonal AlN structure perfectly matching with the XRD Bragg diffraction peak positions corresponding to the literature. 17,20 GIXRD patterns reveal that the lm crystalline quality increases as the annealing temperature rises. No Al-Al bonds that would appear at 72.9 eV can be found.…”

Section: Resultsmentioning

confidence: 99%

Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

et al. 2015

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“…Among the III-nitride compounds, aluminum nitride (AlN) is a promising material for CMOS integration due to its unique optical and electrical properties [1,2]. AlN features a promising optically transparent window around 6.2 eV for ultraviolet and visible light emitting diodes, optical coatings, and multi-tandem solar cells [1,3,4].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, AlN can be a good template for the fabrication of short wavelength emitters and detectors owing to its thermal stability and high thermal conductivity. As a result of these properties, a significant amount of effort has been devoted towards the synthesis of epitaxial, polycrystalline, and amorphous grade AlN thin films [1,[4][5][6][7]. While high-temperature grown epitaxial AlN films are used in active electronic and opto-electronic device layers, polycrystalline and amorphous AlN films grown at CMOS-compatible temperatures are widely used as dielectrics and passivation layers for microelectronic devices [8,9].…”

Section: Introductionmentioning

confidence: 99%

“…To overcome the limited N precursor cracking efficiency at such low temperatures, rf plasma process can be utilized [15,16]. Plasma-enhanced ALD (PEALD) offers a potential solution in order to obtain AlN at temperatures significantly lower than thermal ALD processes due to the increased levels of reactive nitrogen [1,5]. In remote-plasma ALD process, only non-metal precursors are activated in order to avoid cracking of metal precursors.…”

Section: Introductionmentioning

confidence: 99%

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The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition

Alevli

Ozgit

Dönmez

et al. 2011

Journal of Crystal Growth

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a b s t r a c tThe influence of N 2 /H 2 and ammonia as N source materials on the properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum as metal source has been studied.The $-2Y grazing-incidence X-ray diffraction, high resolution transmission electron microscopy, and spectroscopic ellipsometry results on AlN films grown using either NH 3 or N 2 /H 2 plasma revealed polycrystalline and wurtzite AlN layers. The AlN growth rate per cycle was decreased from 0.84 to 0.54Å/cycle when the N source was changed from NH 3 to N 2 /H 2 . Growth rate of AlN remained constant within 100-200 1C for both N precursors, confirming the self-limiting growth mode in the ALD window. Al-Al bond was detected only near the surface in the AlN film grown with NH 3 plasma. AFM analysis showed that the RMS roughness values for AlN films grown on Si(100) substrates using NH 3 and N 2 /H 2 plasma sources were 1.33 nm and 1.18 nm, respectively. The refractive indices of both AlN films are similar except for a slight difference in the optical band edge and position of optical phonon modes. The optical band edges of the grown AlN films are observed at 5.83 and 5.92 eV for ammonia and N 2 /H 2 plasma, respectively. According to the FTIR data for both AlN films on sapphire substrates, the E 1 (TO) phonon mode position shifted from 671 cm À 1 to 675 cm À 1 when the plasma source was changed from NH 3 to N 2 /H 2 .

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Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate

Cited by 9 publications

References 14 publications

Comparison oF Electrical Measurements with Structural Analysis oF Thin High-k Hafnium-based Films

Comparison oF Electrical Measurements with Structural Analysis oF Thin High-k Hafnium-based Films

Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition

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