A capacitive chemical sensor based on porous silicon for detection of polar and non-polar organic solvents

Harraz, Farid A.; Ismail, Adel A.; Bouzid, Houcine; Al-Sayari, S.A.; Al‐Hajry, A.; Al-Assiri, M.S.

doi:10.1016/j.apsusc.2014.04.106

Cited by 49 publications

(37 citation statements)

References 38 publications

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“…In our recent published work, a capacitive PSi sensor has been successfully fabricated for the detection of various organic solvents . In present work, we extend our previous finding of and provide proper means for conductance response measurement. Herein an electrical sensor based on electrochemically fabricated PSi is designed to detect various polar and non‐polar target molecules in the liquid phase.…”

Section: Introductionsupporting

confidence: 69%

“…In addition, only few reports on the sensing of organic solvents via conductance measurement are available in the literature . In our recent published work, a capacitive PSi sensor has been successfully fabricated for the detection of various organic solvents . In present work, we extend our previous finding of and provide proper means for conductance response measurement.…”

Section: Introductionsupporting

confidence: 52%

“…PSi layers were fabricated by a galvanostatic electrochemical anodization of p‐type Si (100) wafer (0.01–0.02 Ω cm), according to our previous procedure . Briefly, prior to anodization, the Si wafer was washed by deionized water and acetone for 15 min, followed by immersing in 5 wt% HF to remove the native oxides.…”

Section: Methodsmentioning

confidence: 99%

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Electrical porous silicon sensor for detection of various organic molecules in liquid phase

Harraz

Ismail

Bouzid

et al. 2015

Phys. Status Solidi A

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An electrical sensor based on porous silicon (PSi) for the detection of various organic molecules in the liquid phase is demonstrated. PSi layers with a thickness of ∼4.5 μm and pore sizes in the range of 30 nm were initially synthesized by the electrochemical anodization of a silicon wafer. Anodic oxidation of the mesoporous layers was conducted to passivate the surface and the electrical contacts were created exclusively onto the front porous film. Real‐time measurements of conductance were performed at room temperature as a sensing response parameter. The as‐fabricated sensors exhibit a sensitive and reversible response upon exposure to polar solvents including ethanol, methanol, acetone, and acetonitrile with a conductance increase. However, an irreversible response was detected upon the addition of non‐polar molecules (n‐hexane and toluene) with a conductance decrease. The response time covering both infiltration and evaporation times was in the order; acetone < methanol < acetonitrile < ethanol. The response to pure water was extremely slow, due to poor hydrophilicity of the surface. The observed response could be understood in terms of the change in surface charge during solvent infiltration, along with changes in the dielectric constant of the porous layer. The sensor could be reused efficiently for ten cyclic tests for acetone, indicating excellent repeatability of the device.

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Section: Introductionsupporting

confidence: 69%

Section: Introductionsupporting

confidence: 52%

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Electrical porous silicon sensor for detection of various organic molecules in liquid phase

Harraz

Ismail

Bouzid

et al. 2015

Phys. Status Solidi A

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“…An anodic current density of 50 mA/cm 2 was applied for 75 s in the dark. This preparation results in an average pore size of 30 nm, a ∼4 m layer thickness and 0.48 porosity [17].…”

Section: Methodsmentioning

confidence: 99%

Surface-enhanced Raman scattering (SERS)-active substrates from silver plated-porous silicon for detection of crystal violet

Harraz

Ismail

Bouzid

et al. 2015

Applied Surface Science

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115

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“…The interest on PS increased rapidly only after the discovery of its visible photoluminescence (PL) at room temperature (3) . However, apart from this important optical property, one of the greatest interest in its application its large surface area and diversity of morphology, originating a promising candidate for applications such as biosensor, gas sensor, solar cells and substrate for film (4)(5)(6) . Several reports have shown that the parameters involved in the porous silicon formation process prepared via electrochemical etching have much influence on the characteristics of the resulting layer (7,8) .…”

Section: Introductionmentioning

confidence: 99%

Morphological evolution of the porous silicon surface for different etching time and current density in hf-ethanol solution

Amaral¹,

Silva²,

Ferreira³

et al. 2015

RBAV

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Porous silicon samples were obtained by anodization process of a n-type silicon wafer. The pores formations were investigated by varying the electrochemical parameters like as current density and etching time.The main objective of the present study is to investigate the influence of these parameters in order to increase the surface area of the porous layer. Scanning electron microscopy and optical profilometer were used for morphological characterization, such as pore size, surface area and morphological evolution of the porous layer. The pores shape showed a tendency to be circular and then break with the increase of etching time as well as current density, resulting in a complex morphological with large surface area. In this work we were obtained surface area increases up to 185%. This information will be useful for future applications destined for material requiring high surface area, such as biosensor, gas sensor and substrate for film.Keywords: Porous silicon; Morphological evolution; Surface area. RESUMOAs amostras de silício poroso foram obtidas por processo de anodização das lâminas de silício tipo-n. As formações de poros foram investigadas variando os parâmetros eletroquímicos, tais como, Morphological evolution of the porous silicon surface for different etching time and current density in hF-ethanol solution Fig. 2 shows the top view image of a typical PS sample prepared by photoelectrochemical oxidation of n-type silicon, etching at different anodization time from 5 to 30 min and current density of 75 mA/cm. In general, there is a continuous evolution in the shape and size of the pores. It was observed that the shape, and the size of macropores are strongly influenced by the anodization time. By comparing the different anodization times it is observed that the superficial structures are more homogeneous as a function of increasing etching time. In Fig. 2(a), for 5 minutes etching time, it is possible to observe the growth of big and small pores, but small in higher amounts. However, the morphologic aspect of both is very similar. RESULTS AND DISCUSSION

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A capacitive chemical sensor based on porous silicon for detection of polar and non-polar organic solvents

Cited by 49 publications

References 38 publications

Electrical porous silicon sensor for detection of various organic molecules in liquid phase

Electrical porous silicon sensor for detection of various organic molecules in liquid phase

Surface-enhanced Raman scattering (SERS)-active substrates from silver plated-porous silicon for detection of crystal violet

Morphological evolution of the porous silicon surface for different etching time and current density in hf-ethanol solution

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