A Carrier Lifetime Sensitivity Probe Based on Transient Capacitance: A novel method to Characterize Lifetime in Z2FET

Adamu-Lema, Fikru; Duan, Meng; Georgiev, Vihar P.; Asenov, Prf. A.

doi:10.1109/sispad.2018.8551644

Cited by 1 publication

(1 citation statement)

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“…A series of 3D TCAD simulations were conducted to analyze the variability impact of fast states at each interface. Interface states play a fundamental role in the device sharp-switching behavior, through the carrier lifetime value [25,46]. An excessive density of interface defects at the top of the ungated region degrades the capacitorless operation, increasing the V ON and the variability.…”

Section: Dynamic Memory Cell: Operation As Capacitorless Drammentioning

confidence: 99%

A Review of Sharp-Switching Band-Modulation Devices

et al. 2021

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This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation.

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Section: Dynamic Memory Cell: Operation As Capacitorless Drammentioning

confidence: 99%