A Chemical Etching Solution for the Determination of the Crystallographic Orientation of GaSb by Optical Reflectograms

A Chemical Etching Solution for the Determination of the Crystallographic Orientation of GaSb by Optical Reflectograms.-Etching of GaSb surfaces with a solution of 1.0 N CuCl in conc. HCl produces sharp figures on the low index planes, (111), (110), and (100) , which allow the optical orientation with an accuracy comparable with that obtained by using X-rays. In particular, the reflectograms obtained from the (111)A and (111)B surfaces are clearly different and allow their easy identification. -(GODINES, J. A.; DE ANDA, F.; CANALES, A.; BANOS, L.; RIOS-JARA, D.; J. Electrochem.

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ChemInform Abstract: A Chemical Etching Solution for the Determination of the Crystallographic Orientation of GaSb by Optical Reflectograms.

Godines

Anda

Canales

et al. 1994

ChemInform

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Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

Kutty

Plis

Khoshakhlagh

et al. 2010

Journal of Elec Materi

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We report on the comparison of mesa sidewall profiles of InAs/GaSb strainedlayer superlattice (SLS) detector structures (k 50% cutoff % 14 lm at V bias = 0 V and T = 30 K) obtained after (a) a conventional BCl 3 -based inductively coupled plasma etch, (b) a chemical etch (H 2 O 2 :HCl:H 2 O, 1:1:4), and (c) a combination of both etches. We found that the smoothest sidewall profile with reasonable undercut ($5 lm) was obtained after chemical etch only. The chemical etch was optimized primarily using an n-type GaSb substrate. During this process, numerous chemical etchants were examined. GaSb n-type substrates were chosen for this study in preference over InAs substrates due to their high chemical reactivity and the complicated composition of the native oxide. In addition, SLS detectors are usually grown on GaSb substrates and, after hybridization of the focal-plane array to the readout integrated circuit, the GaSb substrate is etched away using a combination of wet and dry etching techniques. We found that H 2 O 2 :HCl:H 2 O (1:1:4) etching solution provided the smoothest etched surface of GaSb, with a root-meansquare roughness of 1.59 nm.

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Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs

Hsu

Zeng

Chang

et al. 2016

IEEE Trans. Electron Devices

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A Chemical Etching Solution for the Determination of the Crystallographic Orientation of GaSb by Optical Reflectograms

Cited by 3 publications

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ChemInform Abstract: A Chemical Etching Solution for the Determination of the Crystallographic Orientation of GaSb by Optical Reflectograms.

ChemInform Abstract: A Chemical Etching Solution for the Determination of the Crystallographic Orientation of GaSb by Optical Reflectograms.

Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs

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