A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing

Chen, Ping Hsun; Huang, Bing Wei; Shih, Han C.

doi:10.1016/j.tsf.2004.09.049

Cited by 20 publications

(3 citation statements)

References 10 publications

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“…Despite the emergence of third-and fourth-generation semiconductors, over 90% of current semiconductor devices and integrated circuits still use silicon wafers as the substrate material [1][2][3]. In semiconductor process engineering, chemical-mechanical polishing is the only technology recognized for achieving the global flattening of the wafer surface [4][5][6][7]. The process of polishing monocrystalline silicon wafers involves three main stages: rough polishing, medium polishing, and fine polishing.…”

Section: Introductionmentioning

confidence: 99%

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Jiang,

Guan,

Zhao

et al. 2024

Crystals

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The use of surfactants is crucial in the chemical–mechanical polishing fluid system for silicon wafers. This paper examines the impact of the functional group structure of polyoxyethylene-based nonionic surfactants and the variation in the polyoxyethylene (EO) addition number on the polishing performance of monocrystalline silicon wafers, to achieve the appropriate material removal rate and surface quality. The results demonstrated that the straight-chain structure of fatty alcohol polyoxyethylene ether (AEO-9) exhibited superior performance in wafer polishing compared to octylphenol polyoxyethylene ether (OP-9) and isoprenol polyoxyethylene ether (TPEG) and polyethylene glycol (PEG). By varying the number of EO additions of AEO-type surfactants, this study demonstrated that the polishing performance of monocrystalline silicon wafers was affected by the number of EO additions. The best polishing effect was achieved when the number of EO additions was nine. The mechanism of the role of polyoxyethylene-type nonionic surfactants in silicon wafer polishing was derived through polishing experiments, the contact angle, abrasive particle size analysis, zeta potential measurement, XPS, and other means of characterization.

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Section: Introductionmentioning

confidence: 99%

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Jiang,

Guan,

Zhao

et al. 2024

Crystals

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show abstract

“…[1][2][3] In the manufacturing of semiconductor devices, chemical mechanical polishing (CMP) is the only feasible key technology to achieve local and global planarization. [4][5][6] To further improve the surface morphology of silicon substrates and meet the reliability requirements of advanced IC applications with billions of transistors, CMP of silicon substrates is mainly divided into three steps: rough polishing, intermediate polishing, and final polishing. Rough and intermediate polishing processes together need to achieve a removal amount of 10 μm or more to remove the damaged layer on the silicon surface and achieve surface planarization.…”

mentioning

confidence: 99%

Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions

Yang,

Fang,

Sun

et al. 2024

ECS J. Solid State Sci. Technol.

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In the final polishing process of silicon, it is susceptible to alkaline anisotropic chemical etch and may have residual silicon sol on the surface, leading to an increase in the surface roughness of the wafer. To address this issue, this study investigates the mechanisms of how fatty alcohol polyoxyethylene ether AEO-9 and O-20 affect the surface roughness of silicon through systematic experimental measurements and theoretical calculations. The research results demonstrate that both AEO-9 and O-20 exhibit strong molecular activity and can adsorb on the silicon surface in a parallel manner, forming a protective film that effectively shields against corrosive particle erosion. Additionally, AEO-9 and O-20 can enhance the wetting of corrosive solutions on the silicon surface, resulting in more uniform chemical etch and reduced formation of etching pits. Furthermore, AEO-9 and O-20 can reduce the residual silicon sol on the silicon surface, thereby decreasing surface roughness. These findings shed new light on how AEO-9 and O-20 affect surface roughness on silicon, and suggest their potential use in the final polishing of silicon wafers.

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“…18,19 Chemical reaction kinetics also play an important role in exploring the material removal mechanism in CMP. 20,21 The models concerning abrasive size effect 22,23 and surface passivation effect 24,25 based on chemical reaction kinetics were established to complete the explanation of CMP removal mechanism.…”

mentioning

confidence: 99%

Material Removal Rate Prediction for Sapphire Double-Sided CMP Based on RSM-SVM

Deng

et al. 2022

ECS J. Solid State Sci. Technol.

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As a crucial substrate material for optoelectronic materials, sapphire has important applications in both military and civilian fields. In order to achieve the final processing quality of sapphire substrate materials, double-sided chemical mechanical polishing (DS-CMP) is a necessary process, which is also a guarantee for the preparation of high-end LED chips. Here, the sapphire DS-CMP processing plan based on the Box-Behnken design is obtained and experimented, then a hybrid approach of response surface method (RSM) and support vector machines (SVM) algorithm is established as the material removal rate (MRR) prediction model for sapphire DS-CMP. Furthermore, the material removal process of sapphire DS-CMP, the influence of response variables on the MRR of sapphire DS-CMP, and the prediction results of RSM-SVM on sapphire DS-CMP are analyzed respectively. From the experimental results, the maximum MRR obtained is 387.59 nm/min, which is more than six times the reported MRR of single-sided CMP under similar process parameters. The mean square error of predicted value through RSM-SVM is basically around ±10% of the experimental value, which possess satisfied validity for the MRR prediction of sapphire DS-CMP. Finally, both top and bottom surface quality of sapphire wafers after DS-CMP processing was investigated.

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A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing

Cited by 20 publications

References 10 publications

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions

Material Removal Rate Prediction for Sapphire Double-Sided CMP Based on RSM-SVM

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