A Chemical Vapor Deposition Diamond Reactor for Controlled Thin‐Film Growth with Sharp Layer Interfaces

Schätzle, Philip; Reinke, Philipp; Herrling, David; Götze, Arne; Lindner, Lukas; Jeske, Jan; Kirste, Lutz; Knittel, Peter

doi:10.1002/pssa.202370007

Cited by 2 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Details of the growth development have been reported elsewhere. [ 19,20 ] For the films used in this work, we employed a 915 MHz reactor with purified gases (hydrogen, methane) to enable growth on a circular area with 6″ diameter for high‐throughput processes. All films used were grown on double‐side polished HPHT‐type Ib diamond seed crystals (MB optics) with low‐fluorescent background and roughly 300 μm thickness.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of Nitrogen Vacancy Center‐Doped Free‐Standing Diamond Photonic Devices via Faraday Cage‐Angled Etching

Giese,

Quellmalz,

Knittel

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

In the presented work we develop methods for the fabrication of monolithic diamond integrated photonic devices via Faraday cage angled etching of functional epitaxial diamond layers. We determine optimal waveguide width via simulation and demonstrate the fabrication of nitrogen‐vacancy (NV) centre doped microring resonators. The performance of the devices has been verified via micro photoluminescence as well as cathodoluminescence scans of the in‐grown NV‐centres revealing clearly visible cavity lines. The scalable fabrication method allows for the realization of large numbers of lateral waveguide structures as needed for future applications in integrated quantum sensing devices as well as novel spin‐based quantum computers.This article is protected by copyright. All rights reserved.

show abstract

Section: Methodsmentioning

confidence: 99%

Fabrication of Nitrogen Vacancy Center‐Doped Free‐Standing Diamond Photonic Devices via Faraday Cage‐Angled Etching

Giese,

Quellmalz,

Knittel

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…In order to obtain a high quality diamond film without graphite and amorphous carbon, the proportion of hydrogen flow in the reaction gas (hydrogen/methane) is usually increased to more than 95%. [6][7][8] Generally, it is believed that hydrogen can etch away graphite and amorphous carbon. [9][10][11] However, the etching rate of diamond, graphite, and amorphous carbon films by H atoms has not been fully elucidated yet.…”

Section: Introductionmentioning

confidence: 99%

The Etching Mechanisms of Diamond, Graphite, and Amorphous Carbon by Hydrogen Plasma: A Reactive Molecular Dynamics Study

Zhang

et al. 2023

Advcd Theory and Sims

View full text Add to dashboard Cite

Understanding how hydrogen plasma etches various potential products during the diamond growth process can contribute to improving the knowledge of diamond growth. However, due to the absence of an in situ characterization technique during the etching process, the complex chemical reactions involved in the process obscure the atomic‐scale etching mechanisms. In this paper, the etching mechanisms of diamond (001), graphite (0001), and amorphous carbon substrates irradiated by hydrogen plasmas are investigated and compared using molecular dynamics simulations based on ReaxFF. When the incident energy of H atoms is 1 eV, the rate of carbon loss from graphite and amorphous carbon are far higher than that from diamond. As the incident energy of H atoms increases, the etching rate of diamond shows a slow increase, while the etching rates of amorphous carbon and graphite exhibit more significant increases. It can be concluded that the etching rate of diamond is significantly lower than that of graphite and amorphous carbon under H plasma. In the Chemical Vapor Deposition (CVD) process of diamond growth, the generated graphite and amorphous carbon are rapidly etched, leaving only diamond. This offers a plausible explanation for the growth mechanism of diamond through CVD.

show abstract

A Chemical Vapor Deposition Diamond Reactor for Controlled Thin‐Film Growth with Sharp Layer Interfaces

Cited by 2 publications

References 0 publications

Fabrication of Nitrogen Vacancy Center‐Doped Free‐Standing Diamond Photonic Devices via Faraday Cage‐Angled Etching

Fabrication of Nitrogen Vacancy Center‐Doped Free‐Standing Diamond Photonic Devices via Faraday Cage‐Angled Etching

The Etching Mechanisms of Diamond, Graphite, and Amorphous Carbon by Hydrogen Plasma: A Reactive Molecular Dynamics Study

Contact Info

Product

Resources

About