2020
DOI: 10.1109/tcsi.2020.3006777
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A Class-D FVF LDO With Multi-Level PWM Gate Control, 280-ns Settling Time, and No Overshoot/Undershoot

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Cited by 7 publications
(3 citation statements)
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“…Despite the shortcomings highlighted above, the advantage of loop stability has encouraged other reported works to propose and refine FVF architectures. Among the circuit techniques that have been developed are mirrored control [60]- [62], adaptive and dynamic biasing [34], [63], adaptive and dynamic compensation [23], [25], super source follower (SSF) buffers [24], [30], [36], [64], and Class D with multilevel pulse width modulation (MLPWM) gate control [31]. These techniques aim to provide the necessary fast response to the load current transient improving load regulation while maintaining high current efficiency.…”
Section: A Flipped Voltage Follower Aldosmentioning
confidence: 99%
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“…Despite the shortcomings highlighted above, the advantage of loop stability has encouraged other reported works to propose and refine FVF architectures. Among the circuit techniques that have been developed are mirrored control [60]- [62], adaptive and dynamic biasing [34], [63], adaptive and dynamic compensation [23], [25], super source follower (SSF) buffers [24], [30], [36], [64], and Class D with multilevel pulse width modulation (MLPWM) gate control [31]. These techniques aim to provide the necessary fast response to the load current transient improving load regulation while maintaining high current efficiency.…”
Section: A Flipped Voltage Follower Aldosmentioning
confidence: 99%
“…In contrast to the control methods described above, Class D MLPWM gate driving is employed in [31] to drive the FVF-LDO. To control the gate of the pass transistor, a feedforward transition-detection path (FFTDP) is incorporated to enhance the switching at high loads, from 0 to 300 mA.…”
Section: A Flipped Voltage Follower Aldosmentioning
confidence: 99%
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