A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

Roldán, J.B.; Gamiz, F.; López‐Villanueva, J. A.

doi:10.1109/16.622600

Cited by 7 publications

(5 citation statements)

References 30 publications

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“…For the case in which the mobility depends on the lateral electric field, as expected in conjugated polymers, the problem is even more cumbersome and the FET current differential equation becomes nonlinear. In order to avoid this difficulty, researchers have either linearized the current equation for given drain voltage (V DS ) and gate voltage (V GS ) values (Hoyniak et al 2000), assuming that the charge concentration is constant along the channel or applied numerical methods to calculate the transistor current (Roldan et al 1997). …”

Section: Auston Switch Techniquementioning

confidence: 99%

Charge mobility measurement techniques in organic semiconductors

2009

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Organic electronics is currently experiencing a surge of activities worldwide prompted in part by recent advances in achieving high electronic mobility, light emission over a broad range of frequencies, demonstration of spin valve operation with giant magneto-resistance and other effects. Despite these encouraging promises, there are many roadblocks that hinder a broader proliferation of "plastic electronics" in contemporary technology. Such devices involve charge transport as a main process in their operation processes, and therefore, require high-performance charge-transporting materials. The charge-carrier mobility is the major determining factor for the speed of electronic devices. Arguably, the most significant of them is the challenge to achieve a comprehensive understanding of the fundamentals of charge injection and charge transport in organics. In spite of its simple definition, because of the difficulty of measuring velocity, accurate determination of the mobility of the carriers is not easy and indirect ways are used, each with its own advantages and disadvantages. The article discusses important mobility measurement techniques employed for organic optoelectronic devices.

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Section: Auston Switch Techniquementioning

confidence: 99%

Charge mobility measurement techniques in organic semiconductors

2009

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“…where, Na, Nbsf are respectively the base and BSF doping levels, whereas σ denotes the standard deviation [17].…”

Section: Model Derivationmentioning

confidence: 99%

New Simplified Model of Back Surface Field Polycrystalline Silicon Solar Cells

Ouafia,

Yamina,

Attouya

et al. 2024

MMEP

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Here, an analytical model is proposed to solve in two dimensions the transport equations of the minority carriers, using the method of separation of variables. The present approach considers that the solar cell is composed, in addition to emitter and base regions, of a non-uniformly doped thin region at the back cell to improve the device output parameters. The model is used to investigate the influence of built-in electric field, grain size and recombination velocities (Sgb and Sb for the grain boundary and back surface respectively) on the distribution of excess carriers and the consequent photovoltaic characteristics. The results showed that, as compared to a typical n+p structure, the addition of a p+ rear surface field region enhances the solar cell's output characteristics under the AM1.5 spectrum. An optimum increase in conversion efficiency, open circuit voltage and photocurrent density were found to be 7.2% (from 14% to 15.02%), 6.4% and 5%, respectively. This demonstrates the potential of BSF cell designs to meaningfully improve commercial polycrystalline silicon solar cell's performance. Additional results indicate that higher performance parameters result from increasing grain size and decreasing grain boundary recombination velocity, and that only a modest electric field is sufficient to eliminate the impact of surface recombination velocity for values less or equal to approximately 5.10 3 cm.s -1 . Besides, to validate our approach, the values obtained for photovoltaic quantities were compared with other results reported in literature. A good agreement is found.

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“…However, this does not mean that the expression obtained in this work could not be useful to simulate ultrashort devices in drift-diffusion-based simulators. In such a case, it is necessary, for example, to take into account the effect of the longitudinal electric field [15][16][17].…”

Section: Remote Scattering Modelmentioning

confidence: 99%

An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

Rodríguez

Roldán

Gámiz

2007

Semicond. Sci. Technol.

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The effect of remote scattering mechanisms (such as remote Coulomb scattering and remote surface-roughness scattering) on electron mobility in ultra-thin oxide MOSFETs was studied. We highlighted the important role these scattering mechanisms play in state-of-the-art devices, mainly at low temperatures. As a consequence, the effects of these remote mechanisms on the electron mobility should be taken into account in accurate ultra-thin gate-oxide device simulations. We have developed a mobility model which takes into account the contribution of remote scattering mechanisms in ultra-thin oxide MOSFETs (including both the polysilicon-oxide surface-roughness and Coulomb scattering due to the polysilicon depletion charge). The proposed expression allowed us to reproduce the Monte Carlo simulation results obtained for several of these ultra-thin gate oxide devices. We also used this model along with previously developed models to account for the different scattering mechanisms usually included in mobility analytical calculations to reproduce the experimental results for very thin oxide MOSFETs.

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A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

Cited by 7 publications

References 30 publications

Charge mobility measurement techniques in organic semiconductors

Charge mobility measurement techniques in organic semiconductors

New Simplified Model of Back Surface Field Polycrystalline Silicon Solar Cells

An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

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