An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

Abstract

The effect of remote scattering mechanisms (such as remote Coulomb scattering and remote surface-roughness scattering) on electron mobility in ultra-thin oxide MOSFETs was studied. We highlighted the important role these scattering mechanisms play in state-of-the-art devices, mainly at low temperatures. As a consequence, the effects of these remote mechanisms on the electron mobility should be taken into account in accurate ultra-thin gate-oxide device simulations. We have developed a mobility model which takes into account the contribution of remote scattering mechanisms in ultra-thin oxide MOSFETs (including both the polysilicon-oxide surface-roughness and Coulomb scattering due to the polysilicon depletion charge). The proposed expression allowed us to reproduce the Monte Carlo simulation results obtained for several of these ultra-thin gate oxide devices. We also used this model along with previously developed models to account for the different scattering mechanisms usually included in mobility analytical calculations to reproduce the experimental results for very thin oxide MOSFETs.

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

“…The mobility degradation in the etched vertical channel is strongly dependent on several scattering factors. The sidewall channel mobility µ is modeled by the following expression based on Lombardi model [36]:…”

“…Micromachines 2019, 10, x 6 of 10 scattering factors. The sidewall channel mobility μ is modeled by the following expression based on Lombardi model [36]:…”

Подвижность Электронов В Инверсионных Слоях Полностью Обедняемых Пленок Кремний-На-Изоляторе

“…Подвижность носителей заряда, ограниченная рассея-нием на микрорельефе ГР, не зависит от температуры, µ s r = f (T ) = const [20][21][22]. Подвижность, ограниченная рассеянием на поверхностных фононах, согласно модели Ломбарди [5,7], обратно пропорциональна температуре, µ s ph (T ) = A + bT −1 , где коэффициенты a и b зависят от напряженности эффективного поля в канале (a ∝ E области 3 выражение (3) можно записать в виде…”

Mobility issues in double-gate SOI MOSFETs: Characterization and analysis

“…Volume inversion is very interesting from the point of view of mobility increasing. When the charge is close to the center of the silicon layer, electrons are less affected for scattering mechanisms like roughness scattering and traps on the Si-SiO 2 interface [11], remote scattering (both remote roughness scattering and coulomb scattering) [12], [13]… This yields to an interesting increasing in the mobility of the carriers, a clear benefit of volume inversion.…”